E. Cambril
YOU?
Author Swipe
View article: Two-step growth procedure for homogeneous GaN NW arrays on graphene
Two-step growth procedure for homogeneous GaN NW arrays on graphene Open
Growth of GaN nanowires (NWs) on graphene substrates is carried out by plasma-assisted molecular beam epitaxy. We test a two-step growth procedure consisting of a first stage at relatively low temperature followed by a second stage at high…
View article: Selective Area Growth of GaN μ-Platelets on Graphene
Selective Area Growth of GaN μ-Platelets on Graphene Open
International audience
View article: Mode-locked waveguide polariton laser
Mode-locked waveguide polariton laser Open
So far, exciton-polariton (polariton) lasers were mostly single-mode lasers based on microcavities. Despite the large repulsive polariton-polariton interaction, a pulsed mode-locked polariton laser was never, to our knowledge, reported. He…
View article: Mode-locked GaN waveguide polariton laser
Mode-locked GaN waveguide polariton laser Open
So far, exciton-polariton (polariton) lasers were mostly single mode lasers based on microcavities. Despite the large repulsive polariton-polariton interaction, pulsed mode-locked polariton laser was never reported. Here, we use a $60 \ μm…
View article: Mode synchronization in GaN ridge polariton lasers
Mode synchronization in GaN ridge polariton lasers Open
International audience
View article: Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvature
Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvature Open
International audience
View article: FABRICATION AND CHARACTERIZATION TECHNIQUES TO STUDY FLEXIBLE MICRO LIGHT-EMITTING DIODES WITH A MILLIMETRIC RADIUS OF CURVATURE
FABRICATION AND CHARACTERIZATION TECHNIQUES TO STUDY FLEXIBLE MICRO LIGHT-EMITTING DIODES WITH A MILLIMETRIC RADIUS OF CURVATURE Open
International audience
View article: Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser
Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser Open
We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $\mu$m long GaN etche…
View article: In situ observation of droplet nanofluidics for yielding low-dimensional nanomaterials
In situ observation of droplet nanofluidics for yielding low-dimensional nanomaterials Open
View article: GaAs manufacturing processes conditions for micro- and nanoscale devices
GaAs manufacturing processes conditions for micro- and nanoscale devices Open
View article: Metasurface-based total internal reflection microscopy
Metasurface-based total internal reflection microscopy Open
Recent years have seen a tremendous progress in the development of dielectric metasurfaces for visible light applications. Such metasurfaces are ultra-thin optical devices that can manipulate optical wavefronts in an arbitrary manner. Here…
View article: Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the Rabi splitting
Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the Rabi splitting Open
We investigate the demonstration of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6K to 300K through gratings. They are carefully analyzed withi…
View article: Temporal coherence of spatially indirect excitons across Bose–Einstein condensation: the role of free carriers
Temporal coherence of spatially indirect excitons across Bose–Einstein condensation: the role of free carriers Open
We study the time coherence of the photoluminescence radiated by spatially\nindirect excitons confined in a 10 $\\mu$m electrostatic trap. Above a critical\ntemperature of 1 Kelvin, we show that the photoluminescence has a homogeneous\nspe…
View article: Dynamical control over the confinement of spatially indirect excitons in electrostatic traps of GaAs coupled quantum wells
Dynamical control over the confinement of spatially indirect excitons in electrostatic traps of GaAs coupled quantum wells Open
We study spatially indirect excitons confined in a 10 $μ$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with n…
View article: Spectroscopic signatures for the dark Bose-Einstein condensation of spatially indirect excitons
Spectroscopic signatures for the dark Bose-Einstein condensation of spatially indirect excitons Open
We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other ac…
View article: Publisher’s Note: Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons [Phys. Rev. Lett. <b>118</b>, 127402 (2017)]
Publisher’s Note: Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons [Phys. Rev. Lett. <b>118</b>, 127402 (2017)] Open
This corrects the article DOI: 10.1103/PhysRevLett.118.127402.
View article: Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons
Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons Open
We study spatially indirect excitons of GaAs quantum wells, confined in a 10 μm electrostatic trap. Below a critical temperature of about 1 K, we detect macroscopic spatial coherence and quantized vortices in the weak photoluminescence emi…
View article: In-situ TEM observation of in-plane silicon nanowires growth via solid-liquid-solid process: reactive wetting of indium droplets on a-Si:H
In-situ TEM observation of in-plane silicon nanowires growth via solid-liquid-solid process: reactive wetting of indium droplets on a-Si:H Open
We consider the solid-liquid-solid (SLS) process of in-plane silicon nanowire growth from a point of view of spontaneous motion of indium (In) droplets on hydrogenated amorphous silicon (a-Si:H) coated substrates, and intermixing with the …
View article: Temporal Coherence of a Homogeneously Broadened Gas of Spatially Indirect Excitons and "Gray" Bose-Einstein Condensation
Temporal Coherence of a Homogeneously Broadened Gas of Spatially Indirect Excitons and "Gray" Bose-Einstein Condensation Open
We study the time coherence of the photoluminescence radiated by spatially indirect excitons confined in a 10 $\mu$m electrostatic trap. Above a critical temperature of 1 Kelvin, we show that the photoluminescence has a homogeneous spectra…
View article: Temporal Coherence of Semiconductor Excitons across Bose-Einstein Condensation
Temporal Coherence of Semiconductor Excitons across Bose-Einstein Condensation Open
Very recently, we have shown experimentally that Bose-Einstein condensation leads to a mostly dark gas of excitons in GaAs heterostructures. A small fraction of optically active states nevertheless contributes to the condensate so that a w…
View article: Temporal Coherence of Spatially Indirect Excitons across Bose-Einstein Condensation: the Role of Free Carriers
Temporal Coherence of Spatially Indirect Excitons across Bose-Einstein Condensation: the Role of Free Carriers Open
We study the time coherence of the photoluminescence radiated by spatially indirect excitons confined in a 10 $μ$m electrostatic trap. Above a critical temperature of 1 Kelvin, we show that the photoluminescence has a homogeneous spectral …
View article: Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS
Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS Open
Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration…
View article: Observation of a Dark Condensate of Excitons
Observation of a Dark Condensate of Excitons Open
We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other ac…
View article: Spectroscopic Signatures for the Dark Bose-Einstein Condensation of\n Spatially Indirect Excitons
Spectroscopic Signatures for the Dark Bose-Einstein Condensation of\n Spatially Indirect Excitons Open
We study semiconductor excitons confined in an electrostatic trap of a GaAs\nbilayer heterostructure. We evidence that optically bright excitonic states are\nstrongly depleted while cooling to sub-Kelvin temperatures. In return, the\nother…
View article: Spectroscopic Signatures for Bose-Einstein Condensation of Dark Excitons in a Trap
Spectroscopic Signatures for Bose-Einstein Condensation of Dark Excitons in a Trap Open
We study spatially indirect excitons confined in a 10 microns wide electrostatic trap. At sub-Kelvin bath temperatures, we show that the optical emission from the trap is anomalously weak in a regime where the excitons photoluminescence is…