Michael Dudley
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View article: Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers Open
Indentation behavior induced by the presence of foreign inclusions in a PVT-grown 4H-SiC wafer is investigated through synchrotron X-ray topography, which revealed the generation of dislocation arrays from the inclusion center along six d…
View article: Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs Open
Several 1.2kV 4H-SiC devices of various cell architectures have been successfully fabricated by employing different P+ implantation conditions, resulting in varying levels of Basal Plane Dislocation (BPD) densities across the different dev…
View article: Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer Open
4H-SiC with 180 μm epilayer was subjected to UV exposure. Stacking fault expanded from basal plane dislocation (BPD) loop generated during growth in the epilayer was observed by UV Photoluminescence Imaging (UVPL) and X-ray Topograph (XRT)…
View article: Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Open
Multi-step high energy ion implantation enables uniform doping to depths up to 12 µm in 4H-SiC epiwafers for superjunction devices but extent of lattice damage is of significant concern for device fabrication. 4H-SiC wafers with 12 µm thic…
View article: New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals Open
Prismatic slip systems are the secondary slip systems in Silicon carbide (4H-SiC) crystals. The previously proposed radial thermal model of the PVT growth process for SiC crystals, which predicts the occurrence of slip in different prismat…
View article: Mechanism of novel defect multiplication impacting high power 4H-SiC devices
Mechanism of novel defect multiplication impacting high power 4H-SiC devices Open
Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale…
View article: Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers Open
During crystal growth processes, growth sectors are formed due to growth along different crystallographic directions. Although the crystal structure in the different growth sectors is unchanged, strain induced topography contrast is observ…
View article: Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment Open
Dislocation behaviors after post-growth thermal treatment were investigated by X-ray topography and KOH etching. Generation of prismatic dislocations were observed in X-ray topography, and density of basal plane dislocations (BPDs) increas…
View article: Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography Open
The influence of seed preparation on crystal defect generation is studied by investigating the effect of damage from surface scratches not completely removed during polishing on the seed crystal on the nucleation and evolution of dislocati…
View article: Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Open
4H-SiC wafers with 12 µm epilayers were blanket implanted to a depth of 12 µm with 5 x 10 16 cm -3 Al ions via Tandem Van de Graaff accelerator located at Brookhaven National Laboratory with energy range of 13.8 to 65.7 MeV at room tempera…
View article: Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals Open
To better understand the effects of various growth parameters during the early-stages of PVT growth of 4H-SiC on resulting defect structures, multiple short duration growths have been carried out under varying conditions of seed quality, n…
View article: Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations
Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations Open
Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temp…
View article: Upgraded <i>LauePt4</i> for rapid recognition and fitting of Laue patterns from crystals with unknown orientations
Upgraded <i>LauePt4</i> for rapid recognition and fitting of Laue patterns from crystals with unknown orientations Open
The LauePt program is a popular and easy-to-use crystallography tool for indexing and simulating X-ray Laue patterns, but its previous versions lack search functions for recognizing Laue patterns taken from crystals with unknown orientatio…
View article: Loss of <i>miR-144/451</i> alleviates β-thalassemia by stimulating ULK1-mediated autophagy of free α-globin
Loss of <i>miR-144/451</i> alleviates β-thalassemia by stimulating ULK1-mediated autophagy of free α-globin Open
Most cells can eliminate unstable or misfolded proteins through quality control mechanisms. In the inherited red blood cell disorder β-thalassemia, mutations in the β-globin gene (HBB) lead to a reduction in the corresponding protein and t…
View article: Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers Open
In 4H-SiC crystals, Frank type dislocations are created through the deflection of threading screw/mixed dislocations onto the basal plane. Grazing-incidence X-ray topographs are often used to evaluate the density of such dislocations and a…
View article: Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography Open
Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room temperature (RT) and high temperature (600 °C). The subse…
View article: Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography Open
A novel high energy implantation system has been successfully developed to fabricate 4H-SiC superjunction devices for medium and high voltages via implantation of dopant atoms with multi-energy ranging from 13 to 66 MeV to depths up to 12u…
View article: Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide Open
A highly efficient, high-voltage power switching technology, the Optical Transconductance Varistor (OTV) is being developed based on the photoconductive property of 6H-SiC. The behavior of the dislocations in 6H-SiC under the application o…
View article: Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC
Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC Open
Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4…
View article: Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method Open
In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic slip is often observed in single crystals grown by the physical vapor transport method as the diameter expands to 6 inches or lar…
View article: (Invited) Application of Synchrotron X-Ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power Devices
(Invited) Application of Synchrotron X-Ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power Devices Open
The study of defects and strain in GaN substrates and epilayers for vertical device development using synchrotron X-ray topography techniques is presented. Synchrotron monochromatic beam X-ray topography (SMBXT) studies show that ammonothe…
View article: Off-axis silicon carbide substrates
Off-axis silicon carbide substrates Open
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality o…
View article: Template-Directed RIG-I Agonist Assembly for Targeted Cancer Immunotherapy
Template-Directed RIG-I Agonist Assembly for Targeted Cancer Immunotherapy Open
Recent developments in the use of pattern recognition receptors (PRRs) aim to harness the innate power of the immune system for cancer therapy. Understanding how to recruit PRRs, such as RIG-I, in a tumor-selective manner is critical for i…