Marianne Etzelmüller Bathen
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View article: Theory of the divacancy in 4H-SiC: impact of Jahn-Teller effect on optical properties
Theory of the divacancy in 4H-SiC: impact of Jahn-Teller effect on optical properties Open
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. In this work, first-principles calculations were employed us…
View article: Formation of extended defects in heavy-ion-degraded SiC power MOSFETs
Formation of extended defects in heavy-ion-degraded SiC power MOSFETs Open
Silicon carbide (SiC) power devices offer distinct advantages over silicon-based technology and are envisioned to be of great benefit also for space applications. However, their reliability in space is reduced due to the high susceptibilit…
View article: Reply to “Comment on “Diamond (111) surface reconstruction and epitaxial graphene interface””
Reply to “Comment on “Diamond (111) surface reconstruction and epitaxial graphene interface”” Open
In the Comment by Goletti [], concerns are raised regarding the interpretation of our experimental findings, as well as the application of basic ground-state density functional theory (DFT) models pertaining to the C(111)−(2×1) surface pre…
View article: Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers
Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers Open
This study explores the influence of different hydrocarbons, methane and propane, on the properties of 4H-SiC epitaxial layers grown by chloride-based chemical vapor deposition. By systematically varying the C/Si and N/C ratios during epit…
View article: Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons Open
In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral carbon-oxygen interstitial pair (CiOi) defect in silicon. We …
View article: Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach Open
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4°off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while t…
View article: Exploring the border traps near the valence band in the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math> system using above-band-gap optical excitation
Exploring the border traps near the valence band in the - system using above-band-gap optical excitation Open
Studying near-valence-band (EV) defects at the insulator–n-type 4H-SiC interface is challenging due to the low minority carrier concentration. Herein, we present a technique for characterizing the border traps near EV in an n-type 4H-SiC M…
View article: Formation and stability of point defect color centers in 6H silicon carbide
Formation and stability of point defect color centers in 6H silicon carbide Open
Point defect color centers acting as single-photon emitters are promising for quantum technology applications and have been extensively studied, e.g., in the 4H polytype of silicon carbide (SiC). However, the physics of such color centers …
View article: Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface
Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface Open
Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of…
View article: Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC
Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC Open
In this work, we have performed a detailed study of the defects created in the bulk of 4H-SiC after thermal oxidation and post oxidation annealing using deep level transient spectroscopy and minority carrier transient spectroscopy (MCTS). …
View article: Theoretical modeling of defect diffusion in wide bandgap semiconductors
Theoretical modeling of defect diffusion in wide bandgap semiconductors Open
Since the 1940s, it has been known that diffusion in crystalline solids occurs due to lattice defects. The diffusion of defects can have a great impact on the processing and heat treatment of materials as the microstructural changes caused…
View article: Al-implantation induced damage in 4H-SiC
Al-implantation induced damage in 4H-SiC Open
Ion implantation of 4H-SiC is one of the crucial steps in the fabrication of power devices. This process results in the generation of electrically active defects both in the implanted region and beyond. In this work, we explore the defects…
View article: Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC
Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC Open
This work presents the characterization of minority carrier traps in epitaxial n-type 4H-SiC after high fluence neutron irradiation using minority carrier transient spectroscopy (MCTS) in a temperature range of 20 K to 660 K. Three minorit…
View article: Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes
Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes Open
In this work, the impact of 200 MeV proton irradiation at a fluence of 6 × 10 12 cm −2 on the forward characteristics and the breakdown behaviour of nickel (Ni) and titanium (Ti) Schottky barrier diodes is explored. An improvement in the i…
View article: Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs Open
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to prist…
View article: Charge State Control over Point Defects in Sic Devices
Charge State Control over Point Defects in Sic Devices Open
Point defects in silicon carbide (SiC) are well positioned for integration with SiC based quantum photonic devices due to the maturity of SiC material and fabrication technology, the plethora of candidate quantum emitters that can be forme…
View article: Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique
Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique Open
We demonstrate that the multi-photon absorption edge transient-current technique (edge-TCT) can be used to three-dimensionally map the impact of defect distributions on device characteristics in situ inside the bulk of silicon carbide devi…
View article: The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers Open
One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limitin…
View article: Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation
Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation Open
Deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) Schottky power diodes after heavy-ion microbeam irradiation…
View article: Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy
Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy Open
Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$μ$SR). In this work, we leverage the…
View article: Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations
Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations Open
The carrier lifetime control over 150 μm thick 4H‐SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (V C ) related Z 1/2 lifetime killer sites is reported. The defect developments upon typical SiC processing st…
View article: Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC
Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC Open
Silicon carbide (SiC) is a wide band-gap semiconductor of great technological importance, showing promise for application areas ranging from quantum computing and communication to power devices. Vital in both the contexts of power devices …
View article: Depth-Resolved Study of the SiO<sub>2</sub>- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy
Depth-Resolved Study of the SiO<sub>2</sub>- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy Open
In this work, the interface between 4H-SiC and thermally grown SiO 2 is studied using low energy muon spin rotation (LE-μSR) spectroscopy. Samples oxidized at 1300 °C were annealed in NO or Ar ambience and the effect of the ambience and th…
View article: Diamond (111) surface reconstruction and epitaxial graphene interface
Diamond (111) surface reconstruction and epitaxial graphene interface Open
The evolution of the diamond (111) surface as it undergoes reconstruction and\nsubsequent graphene formation is investigated with angle-resolved photoemission\nspectroscopy, low energy electron diffraction, and complementary density\nfunct…