E. M. Findlay
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View article: High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures Open
New Insulated Gate Bipolar Transistor (IGBT) designs are reliant on simulation tools, such as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing pr…
View article: Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor
Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor Open
This letter presents the dual implant superjunction (SJ) trench reverse-conducting (RC) insulated-gate bipolar transistor (IGBT) concept with two implanted SJ pillars in the drift region: one from the cathode side and another from the anod…
View article: Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak
Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak Open
Three-dimensional (3-D) modeling is becoming an increasingly prevalent technique to model more complex device structures. However, this alone is insufficient to accurately model large area devices. This study images the birds-beak in a com…
View article: Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies
Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies Open
The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but n…