M. Menichelli
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View article: Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices Open
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View article: RD53 pixel readout integrated circuits for ATLAS and CMS HL-LHC upgrades
RD53 pixel readout integrated circuits for ATLAS and CMS HL-LHC upgrades Open
The RD53 collaboration has since 2013 developed new hybrid pixel detector chips with 50 × 50 μm 2 pixels for the HL-LHC upgrades of the ATLAS and CMS experiments at CERN. A common architecture, design and verification framework has been de…
View article: Proton irradiation on Hydrogenated Amorphous Silicon flexible devices
Proton irradiation on Hydrogenated Amorphous Silicon flexible devices Open
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices h…
View article: Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance Open
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-…
View article: Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors
Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors Open
Objective. Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic radiation hardness, a high dynamic range, and a micron-scale spatial resolution. In this work we characterize hydrogenate…
View article: HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate
HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate Open
Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous S…
View article: Characterization of a flexible a‐Si:H detector for in vivo dosimetry in therapeutic x‐ray beams
Characterization of a flexible a‐Si:H detector for in vivo dosimetry in therapeutic x‐ray beams Open
Background The increasing use of complex and high dose‐rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre‐treatment quality assurance (QA) measurements alone, many…
View article: Latest results from the RD42 collaboration on the radiation tolerance of polycrystalline diamond detectors
Latest results from the RD42 collaboration on the radiation tolerance of polycrystalline diamond detectors Open
As nuclear and particle physics facilities move to higher intensities, the detectors used there must be more radiation tolerant. Diamond is in use at many facilities due to its inherent radiation tolerance and ease of use. In this article …
View article: Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate
Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate Open
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible senso…
View article: Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate
Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate Open
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible senso…
View article: X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate
X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate Open
Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (P…
View article: Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy
Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy Open
Objective . Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This ap…
View article: Alternative Approach to Front-end Amplifiers Design for Timing Measurement with Silicon Pixel Detectors
Alternative Approach to Front-end Amplifiers Design for Timing Measurement with Silicon Pixel Detectors Open
The increase in luminosity and pileup foreseen for future colliders has recently pushed central pixel detector technology towards an increase in timing resolution. Increased time resolution can ease track reconstruction by adding a more pr…
View article: A Hydrogenated amorphous silicon detector for Space Weather Applications
A Hydrogenated amorphous silicon detector for Space Weather Applications Open
The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent ra…
View article: A Hydrogenated amorphous silicon detector for Space Weather Applications
A Hydrogenated amorphous silicon detector for Space Weather Applications Open
The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent ra…
View article: Radiation tolerance of diamond detectors
Radiation tolerance of diamond detectors Open
Diamond is used as detector material in high energy physics experiments due to its inherent radiation tolerance. The RD42 collaboration has measured the radiation tolerance of chemical vapour deposition (CVD) diamond against proton, pion, …
View article: High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices Open
In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i…
View article: Status and perspectives of hydrogenated amorphous silicon detectors for MIP detection and beam flux measurements
Status and perspectives of hydrogenated amorphous silicon detectors for MIP detection and beam flux measurements Open
Hydrogenated amorphous silicon (a-Si:H) particle detectors have been considered as alternatives to crystalline silicon detectors (c-Si) in high radiation environments, due to their excellent radiation hardness. However, although their capa…
View article: Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors.
Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors. Open
Hydrogenated amorphous silicon is a well known detector material for its radiation resistance. This study concern 10 µm thickness, p-i-n and charge selective contacts planar diode detectors which were irradiated with neutrons at two fluenc…
View article: Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors.
Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors. Open
Hydrogenated amorphous silicon is a well known detector material for its radiation resistance. This study concern 10 µm thickness, p-i-n and charge selective contacts planar diode detectors which were irradiated with neutrons at two fluenc…
View article: Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors.
Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors. Open
Hydrogenated amorphous silicon is a well known detector material for its radiation resistance. This study concern 10 µm thickness, p-i-n and charge selective contacts planar diode detectors which were irradiated with neutrons at two fluenc…
View article: Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors
Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors Open
Hydrogenated Amorphous Silicon (a-Si:H) is a well known material for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated ent…
View article: Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes
Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes Open
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited …
View article: Fabrication of a Hydrogenated Amorphous Silicon detector in 3-D Geometry and Preliminary Test on Planar Prototypes
Fabrication of a Hydrogenated Amorphous Silicon detector in 3-D Geometry and Preliminary Test on Planar Prototypes Open
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapour deposition (PECVD) of SiH4 (Silane) mixed with Hydrogen. The resulting material shows outstanding radiation resistance properties and can be deposit…
View article: A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions
A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions Open
We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sampl…
View article: 3D Detectors on Hydrogenated Amorphous Silicon for particle tracking in high radiation environment
3D Detectors on Hydrogenated Amorphous Silicon for particle tracking in high radiation environment Open
The vertex detectors for the future hadronic colliders will operate under proton fluencies above 10 16 p/cm 2 . Crystalline Silicon detector technology, up to now, has kept the pace of the increasing fluencies in the LHC era and it is stil…
View article: Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors
Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors Open
© Copyright © 2020 Davis, Boscardin, Crivellari, Fanò, Large, Menichelli, Morozzi, Moscatelli, Movileanu-Ionica, Passeri, Petasecca, Piccini, Rossi, Scorzoni, Thompson, Verzellesi and Wyrsch. There is currently a renewed interest in hydrog…