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View article: KOH Wet Etching Mechanisms of III–N Nanopillars: Impact of Temperature and Concentration
KOH Wet Etching Mechanisms of III–N Nanopillars: Impact of Temperature and Concentration Open
Combining dry and wet etching processes is a common technique to pattern III-N semiconductors integrated in optoelectronic devices with a controlled final shape and high-quality crystallographic facets. However, the wet mechanisms driving …
View article: Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices
Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices Open
International audience
View article: Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures
Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures Open
Efficiently passivating germanium (Ge) surfaces is crucial to reduce the unwanted recombination current in high-performance devices. Chemical surface cleaning is critical to remove surface contaminants and Ge oxides, ensuring effective sur…
View article: 3D interconnects for III-V semiconductor heterostructures for miniaturized power devices
3D interconnects for III-V semiconductor heterostructures for miniaturized power devices Open
International audience
View article: Mid-IR All-Optical Poling in Silicon Nitride Waveguides
Mid-IR All-Optical Poling in Silicon Nitride Waveguides Open
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View article: Reconfigurable Silicon Photonic Chip for the Generation Of Frequency-Bin-Entangled Qudits
Reconfigurable Silicon Photonic Chip for the Generation Of Frequency-Bin-Entangled Qudits Open
International audience
View article: Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices
Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices Open
During the fabrication of metal oxide semiconductor high electron mobility transistor based on AlGaN/GaN heterostructure, gate patterning is recognized as the most critical step that can lead to electrical degradation of the transistor. In…
View article: A reconfigurable silicon photonics chip for the generation of frequency bin entangled qudits
A reconfigurable silicon photonics chip for the generation of frequency bin entangled qudits Open
Quantum optical microcombs in integrated ring resonators generate entangled photon pairs over many spectral modes, and allow the preparation of high dimensional qudit states. Ideally, those sources should be programmable and have a high ge…
View article: Programmable frequency-bin quantum states in a nano-engineered silicon device
Programmable frequency-bin quantum states in a nano-engineered silicon device Open
Photonic qubits should be controllable on-chip and noise-tolerant when transmitted over optical networks for practical applications. Furthermore, qubit sources should be programmable and have high brightness to be useful for quantum algori…
View article: Open data for "Programmable frequency-bin quantum states in a nano-engineered silicon device"
Open data for "Programmable frequency-bin quantum states in a nano-engineered silicon device" Open
The folder includes includes the raw data that were used for generation of all Figures in the paper "Programmable frequency-bin quantum states in a nano-engineered silicon device".
View article: Open data for "Programmable frequency-bin quantum states in a nano-engineered silicon device"
Open data for "Programmable frequency-bin quantum states in a nano-engineered silicon device" Open
The folder includes includes the raw data that were used for generation of all Figures in the paper "Programmable frequency-bin quantum states in a nano-engineered silicon device".
View article: Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface
Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface Open
Controlling the plasma etching step involved in metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) GaN fabrication is essential for device performance and reliability. In particular, understanding the impact of GaN etchi…
View article: Nonlinear coupling of linearly uncoupled resonators through a Mach–Zehnder interferometer
Nonlinear coupling of linearly uncoupled resonators through a Mach–Zehnder interferometer Open
Optical nonlinear processes in linearly uncoupled resonators are being actively studied as a convenient way to engineer and control the generation of non-classical light. In these structures, one can take advantage of the independent combs…
View article: Superspontaneous Four-Wave Mixing in an Array of Silicon Microresonators
Superspontaneous Four-Wave Mixing in an Array of Silicon Microresonators Open
Composite optical systems can show compelling collective dynamics. For\ninstance, the cooperative decay of quantum emitters into a common radiation\nmode can lead to superradiance, where the emission rate of the ensemble is\nlarger than th…
View article: Extending thermal stability of short-living soliton states in silicon nitride microring resonators
Extending thermal stability of short-living soliton states in silicon nitride microring resonators Open
Dissipative Kerr solitons in microresonators enable on-chip chip generation of low-noise optical pulse trains with high repetition rates, finding applications in optical communication, distance measurement, spectroscopy and radiofrequency …
View article: A device library for the ultra-low loss Si3N4 platform
A device library for the ultra-low loss Si3N4 platform Open
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View article: Influence of the carrier wafer during GaN etching in Cl2 plasma
Influence of the carrier wafer during GaN etching in Cl2 plasma Open
In this study, we have performed a thorough characterization of the GaN surface after etching up to 100 nm in Cl2 plasma under various bias voltages and according to the carrier wafer used (Si, SiO2, Si3N4, and photoresist). The objective …
View article: Cooperative Spontaneous Four-wave Mixing in Single-channel and Dualchannel Sequences of Side-coupled Ring Resonators
Cooperative Spontaneous Four-wave Mixing in Single-channel and Dualchannel Sequences of Side-coupled Ring Resonators Open
Cooperative photon pair generation by Spontaneous Four-Wave Mixing (SFWM) process in singlechannel and dual-channel side-coupled ring resonator sequences is investigated. Our analysis shows that superlinear growth of generation rate with r…
View article: Multijunction solar cell mesa isolation: A comparative study
Multijunction solar cell mesa isolation: A comparative study Open
At the end of the fabrication process, multijunction solar cells must be electrically isolated from one to another; a step commonly known as mesa isolation. In this paper, three different techniques are assessed to perform this step: saw-d…
View article: Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells
Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells Open
Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAs x P quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were characterized by …
View article: Suppression of Parasitic Nonlinear Processes in Spontaneous Four-Wave Mixing with Linearly Uncoupled Resonators
Suppression of Parasitic Nonlinear Processes in Spontaneous Four-Wave Mixing with Linearly Uncoupled Resonators Open
We report on a signal-to-noise ratio characterizing the generation of identical photon pairs of more than 4 orders of magnitude in a ring resonator system. Parasitic noise, associated with single-pump spontaneous four-wave mixing, is essen…
View article: III-V/Ge Multijunction Solar Cell with Through Cell Via Contact Fabrication and Characterization
III-V/Ge Multijunction Solar Cell with Through Cell Via Contact Fabrication and Characterization Open
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View article: Multijunction Solar Cell Mesa Isolation: A Comparative Study
Multijunction Solar Cell Mesa Isolation: A Comparative Study Open
International audience