E. Todd Ryan
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View article: An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines Open
The applicability of the Fuchs-Sondheimer and Mayadas-Shatzkes scattering models below the 14nm node with wide interconnect trenches of variable aspect ratio is investigated. The aspect ratio of these lines was varied between 1.2, 1.8, and…
View article: Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models Open
This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate p…
View article: Tailoring capping layers to reduce stress gradients in copper metallization
Tailoring capping layers to reduce stress gradients in copper metallization Open
Capping layers for back-end-of-line metallization, which primarily serve as diffusion barriers to prevent contamination, also play a role in mitigating electromigration in the underlying conductive material. Stress gradients can be generat…
View article: Effects of ultraviolet (UV) irradiation in air and under vacuum on low-k dielectrics
Effects of ultraviolet (UV) irradiation in air and under vacuum on low-k dielectrics Open
This work addresses the effect of ultraviolet radiation of wavelengths longer than 250 nm on Si-CH3 bonds in porous low-k dielectrics. Porous low-k films (k = 2.3) were exposed to 4.9 eV (254 nm) ultraviolet (UV) radiation in both air and …
View article: Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics
Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics Open
Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the distribution of trapped charges within the bandgap of low dielectric constant (low-k) organosilicate (SiCOH) materials. It was found that trapped charges ar…