Edward Yi Chang
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View article: Low-Damage Atomic Layer Etching for Contact Resistance Reduction in Millimeter Wave AlGaN/GaN HEMTs on Si
Low-Damage Atomic Layer Etching for Contact Resistance Reduction in Millimeter Wave AlGaN/GaN HEMTs on Si Open
High-performance AlGaN/GaN MOSHEMTs on Si were demonstrated using atomic layer etching (ALE) for ohmic recess. The ALE technique enabled atomic-scale precision and effectively mitigated plasma-induced damage, leading to a smoother surface …
View article: Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors
Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors Open
View article: Multi-Agent Collaborative Intelligence: Dual-Dial Control for Reliable LLM Reasoning
Multi-Agent Collaborative Intelligence: Dual-Dial Control for Reliable LLM Reasoning Open
Multi-agent debate often wastes compute by using a fixed adversarial stance, aggregating without deliberation, or stopping on heuristics. We introduce MACI, an active controller with two independent dials that decouple information from beh…
View article: Comparison of Digital and Atomic Layer Etching for Gate Recess in AlGaN/GaN MOSHEMTs for Ka-Band
Comparison of Digital and Atomic Layer Etching for Gate Recess in AlGaN/GaN MOSHEMTs for Ka-Band Open
This study compares digital etching (DE) and atomic layer etching (ALE) for gate recessing in AlGaN/GaN metal oxide semiconductor high-electro-mobility transistors (MOSHEMTs) on Si substrate. While DE reduces plasma damage, it suffers from…
View article: Large-Period van der Waals Epitaxy of Au on MoS<sub>2</sub> at Room Temperature: Moiré-Engineered Interfaces for Nanoelectronics
Large-Period van der Waals Epitaxy of Au on MoS<sub>2</sub> at Room Temperature: Moiré-Engineered Interfaces for Nanoelectronics Open
View article: The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements
The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements Open
View article: Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate
Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate Open
This work explores the dual-step epitaxial GaN (DSE-GaN) process for the selective area growth of GaN drains on Si (100) substrates, addressing critical challenges in melt-back etching and regrowth selectivity. The DSE-GaN process combines…
View article: Strained-channel Si n-MOSFET with GaN-drain via dual-step selective epitaxy for mobility enhancement on Si(100) substrate
Strained-channel Si n-MOSFET with GaN-drain via dual-step selective epitaxy for mobility enhancement on Si(100) substrate Open
This work explores the integration of strained-channel silicon n-MOSFET with GaN drain using the dual-step selective area epitaxial growth of GaN process, enabling CMOS-compatible, fully selective GaN growth with an excellent GaN/Si interf…
View article: Enhanced RF Performance of InAlGaN/GaN HEMTs on Si Substrates with Thin GaN Channel and Quaternary Barrier Optimization
Enhanced RF Performance of InAlGaN/GaN HEMTs on Si Substrates with Thin GaN Channel and Quaternary Barrier Optimization Open
This study demonstrates quaternary In 0.05 Al 0.25 GaN/GaN high electron mobility transistors (HEMTs) fabricated on Si substrates, incorporating a 50 nm thin GaN channel layer. The devices exhibit high carrier density, an impressive On-Off…
View article: Quantifying Doxorubicin Toward Adaptive Chemotherapy with an Electrochemical Aptamer-Based Biosensor
Quantifying Doxorubicin Toward Adaptive Chemotherapy with an Electrochemical Aptamer-Based Biosensor Open
Despite more than 100 chemotherapy treatments being available worldwide, 10 million people died of cancer in 2023. Doxorubicin is a common chemotherapy treatment, yet its survival rate is 28% due to its narrow therapeutic window, suggestin…
View article: Immunotherapy targeting a leader sequence cathepsin G-derived peptide
Immunotherapy targeting a leader sequence cathepsin G-derived peptide Open
View article: MACI: Multi-Agent Collaborative Intelligence for Adaptive Reasoning and Temporal Planning
MACI: Multi-Agent Collaborative Intelligence for Adaptive Reasoning and Temporal Planning Open
Artificial intelligence requires deliberate reasoning, temporal awareness, and effective constraint management, capabilities traditional LLMs often lack due to their reliance on pattern matching, limited self-verification, and inconsistent…
View article: High-Power, High-Repetition Short-Pulse Laser Driver Using Direct-Drive D-Mode GaN HEMT
High-Power, High-Repetition Short-Pulse Laser Driver Using Direct-Drive D-Mode GaN HEMT Open
This paper proposes a short-pulse laser driver using direct-drive depletion-mode gallium nitride high-electron-mobility-transistor (DDD GaN HEMT) device. Known for its low on-resistance, high switching performance, normally-off operation, …
View article: Copolar Synchronous Switching Method for BLDC Motor Control in EV Application
Copolar Synchronous Switching Method for BLDC Motor Control in EV Application Open
This paper proposes a new PWM switching method, called copolar switching, for synchronous rectification in brushless DC motors (BLDC). This method-integrates the benefits of both unipolar and bipolar switching, addressing the efficiency tr…
View article: Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications Open
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMTs) with a small gate length were fabricated using a stepper. Additionally, a novel gate fabrication process was conducted to shrink the gate head, thus reducing the parasitic …
View article: Cumulative blood pressure load and cognitive decline in older adults: An observational analysis of two large cohorts
Cumulative blood pressure load and cognitive decline in older adults: An observational analysis of two large cohorts Open
Higher cumulative BP is associated with greater declines in RAVLT measured immediate memory span and complex attention, information processing speed and visuospatial scanning in older adults, but the scale of change is small. Additional re…
View article: Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation
Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation Open
View article: Unlocking the Wisdom of Large Language Models: An Introduction to The Path to Artificial General Intelligence
Unlocking the Wisdom of Large Language Models: An Introduction to The Path to Artificial General Intelligence Open
This booklet, Unlocking the Wisdom of Multi-LLM Collaborative Intelligence, serves as an accessible introduction to the full volume The Path to Artificial General Intelligence. Through fourteen aphorisms, it distills the core principles of…
View article: EVINCE: Optimizing Multi-LLM Dialogues Using Conditional Statistics and Information Theory
EVINCE: Optimizing Multi-LLM Dialogues Using Conditional Statistics and Information Theory Open
EVINCE (Entropy and Variation IN Conditional Exchanges) is a novel framework for optimizing multi-LLM dialogues using conditional statistics and information theory. It addresses limitations in multi-agent debate (MAS) frameworks, where mul…
View article: High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications
High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications Open
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 ×…
View article: Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests
Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests Open
This study compares Vth-instability in D-mode MIS-HEMT devices between two epitaxial layers, AlN/AlGaN/GaN superlattice-W1, and three-step graded AlGaN-W2. Experimental results demonstrate that W1 exhibits ∼13% less Vth-instability compare…
View article: High-Frequency Pulsed Laser Driver Using Complementary GaN HEMTs
High-Frequency Pulsed Laser Driver Using Complementary GaN HEMTs Open
This paper attempts to disclose a high-efficiency laser driver which controls laser source for high-frequency Light Detection and Ranging (LiDAR) applications. The specific LiDAR requisites encompass a 20 MHz laser repetition rate, a 10 ns…
View article: Ensuring Ground Truth Accuracy in Healthcare with the EVINCE framework
Ensuring Ground Truth Accuracy in Healthcare with the EVINCE framework Open
Misdiagnosis is a significant issue in healthcare, leading to harmful consequences for patients. The propagation of mislabeled data through machine learning models into clinical practice is unacceptable. This paper proposes EVINCE, a syste…
View article: Adsorption and reversible detection of toxic halogens gases at room temperature by two-dimensional Al2SSe for occupational sustainability
Adsorption and reversible detection of toxic halogens gases at room temperature by two-dimensional Al2SSe for occupational sustainability Open
Current treatment for inhalational halogens poisoning involves providing supportive care, which includes administering humidified oxygen and managing the airway. Since toxic effects of halogens cannot be reversed, sensors with high sensiti…
View article: Reactive sputtering of ferroelectric AlScN films with H<sub>2</sub> gas flow for endurance improvement
Reactive sputtering of ferroelectric AlScN films with H<sub>2</sub> gas flow for endurance improvement Open
The impact of H 2 gas flow in the reactive sputtering process to 60 nm-thick ferroelectric Al 1− x Sc x N films is investigated with x of 0.26 (high-Sc) and 0.12 (low-Sc). Al 1− x Sc x N films exhibit clear ferroelectric switching, confirm…
View article: SocraSynth: Multi-LLM Reasoning with Conditional Statistics
SocraSynth: Multi-LLM Reasoning with Conditional Statistics Open
Large language models (LLMs), while promising, face criticisms for biases, hallucinations, and a lack of reasoning capability. This paper introduces SocraSynth, a multi-LLM agent reasoning platform developed to mitigate these issues. Socra…
View article: An Amperometric Stability Study of Titanium Dioxide Nanoparticle Layer on Interdigitated Electrode Contact Based on Morphology, Structure, and Surface-Induced Response
An Amperometric Stability Study of Titanium Dioxide Nanoparticle Layer on Interdigitated Electrode Contact Based on Morphology, Structure, and Surface-Induced Response Open
View article: Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band
Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band Open
The effect of different SiNx thicknesses on the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated in this paper. The current, transconductance (Gm), cut-off frequency (fT), maximum oscillation frequency (…
View article: High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al<sub>0.07</sub>Ga<sub>0.93</sub>N as Interlayer for High RF Applications
High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al<sub>0.07</sub>Ga<sub>0.93</sub>N as Interlayer for High RF Applications Open
In this study, AlGaN/GaN high electron mobility transistor (HEMT) with different interlayer thicknesses of Al 0.07 Ga 0.93 N were grown by metal-organic chemical vapour deposition (MOCVD) is investigated. The AlGaN/GaN HEMTs have the same …
View article: Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy
Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy Open
Indium nitride (InN) plays an imperative role in continuing the success of III-nitride technology and extending its footprint into new application fields. However, the development of InN-based devices is hindered by the unusually high resi…