Edwin Supple
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View article: Abrupt ternary III–V metamorphic buffers
Abrupt ternary III–V metamorphic buffers Open
Emerging quantum materials as well as novel traditional electronic and photonic materials may enable a new generation of information science devices if they can be synthesized on suitable substrates. Additionally, material and device desig…
View article: Towards Atomic Scale Tomography Using Correlative 4-D STEM, Strain Mapping, and Atom Probe Tomography
Towards Atomic Scale Tomography Using Correlative 4-D STEM, Strain Mapping, and Atom Probe Tomography Open
Journal Article Towards Atomic Scale Tomography Using Correlative 4-D STEM, Strain Mapping, and Atom Probe Tomography Get access Edwin Supple, Edwin Supple Colorado School of Mines, Metallurgical and Materials Engineering, Golden, CO, USA …
View article: Ultrathin stable Ohmic contacts for high-temperature operation of <i>β</i>-Ga2O3 devices
Ultrathin stable Ohmic contacts for high-temperature operation of <i>β</i>-Ga2O3 devices Open
Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynam…
View article: Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$-Ga$_2$O$_3$ Devices
Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$-Ga$_2$O$_3$ Devices Open
Beta gallium oxide ($β$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present unique …
View article: Epitaxial ZnGeP<sub>2</sub> Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine
Epitaxial ZnGeP<sub>2</sub> Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine Open
Modern optoelectronic devices are constrained to a fixed collection of band gap and lattice parameter combinations by the limited number of semiconductors that can be epitaxially integrated with high crystal quality. II–IV–V2 compounds are…
View article: 4-D STEM Analyses of Cylindrical Specimens for Atom Probe Tomography
4-D STEM Analyses of Cylindrical Specimens for Atom Probe Tomography Open
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View article: Atomic Structure of Superconducting Tunnel Junctions using STEM and APT
Atomic Structure of Superconducting Tunnel Junctions using STEM and APT Open
An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the 'Save PDF' action button.