Elias Kluth
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View article: Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps
Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps Open
We present the anisotropic dielectric functions and absorption coefficients of orthorhombic single-domain (001) κ-Ga2O3. Single-domain κ-Ga2O3 grown by mist chemical vapor deposition on ε-GaFeO3 was investigated by spectroscopic ellipsomet…
View article: Blue shift of the absorption onset and bandgap bowing in rutile Ge<i>x</i>Sn1−<i>x</i>O2
Blue shift of the absorption onset and bandgap bowing in rutile Ge<i>x</i>Sn1−<i>x</i>O2 Open
The ordinary dielectric functions (DFs) of rutile GexSn1−xO2 thin films grown by pulsed laser deposition have been obtained by spectroscopic ellipsometry from the near infrared to the ultraviolet range. Additionally, the Ge content x and t…
View article: Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al<sub> x </sub>Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub> alloys
Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al<sub> x </sub>Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub> alloys Open
The anisotropic dielectric functions (DF) of corundum structured m -plane α -(Al x Ga 1− x ) 2 O 3 thin films (up to x = 0.76) grown on m -plane sapphire substrate by metalorganic CVD have been investigated. IR and visible–UV spectroscopic…
View article: Synthesis and Structural Characterization of Divalent Transition Metal Alkynylamidinate Complexes
Synthesis and Structural Characterization of Divalent Transition Metal Alkynylamidinate Complexes Open
A series of new alkynylamidinate complexes of selected first and second row transition metals has been synthesized and fully characterized. Treatment of MCl 2 precursors (M=Mn, Fe, Co) with 2 equiv. of the lithium alkynylamidinates Li[ c ‐…
View article: Redshift and amplitude increase in the dielectric function of corundum-like α-(Ti<i>x</i>Ga1−<i>x</i>)2O3
Redshift and amplitude increase in the dielectric function of corundum-like α-(Ti<i>x</i>Ga1−<i>x</i>)2O3 Open
Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric function (DF) of corundum-like α-(TixGa1−x)2O3 with increasing Ti content is presented. α-Ga2O3 thin film samples alloyed with Ti up to x=0.61 ar…
View article: Epitaxial synthesis of unintentionally doped <i>p</i>-type SnO (001) via <i>suboxide</i> molecular beam epitaxy
Epitaxial synthesis of unintentionally doped <i>p</i>-type SnO (001) via <i>suboxide</i> molecular beam epitaxy Open
By employing a mixed SnO2 + Sn source, we demonstrate suboxide molecular beam epitaxy (S-MBE) growth of phase-pure single-crystalline metastable SnO (001) thin films on Y-stabilized ZrO2 (001) substrates at a growth rate of ∼1.0 nm/min wit…
View article: Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy Open
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These film…
View article: Optical properties of corundum-structured In2O3
Optical properties of corundum-structured In2O3 Open
The optical properties of a single-phase corundum-structured In2O3 epilayer grown by a mist chemical vapor deposition method have been studied. Raman scattering measurements on a c face and on a lateral face reveal all of the seven Raman-a…
View article: Tackling Disorder in γ‐Ga<sub>2</sub>O<sub>3</sub>
Tackling Disorder in γ‐Ga<sub>2</sub>O<sub>3</sub> Open
Ga 2 O 3 and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga 2 O 3 offers potential for electronic structure engineering, which is of particular interest for a range of …
View article: Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates
Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates Open
View article: CCDC 2111885: Experimental Crystal Structure Determination
CCDC 2111885: Experimental Crystal Structure Determination Open
View article: CCDC 2111886: Experimental Crystal Structure Determination
CCDC 2111886: Experimental Crystal Structure Determination Open
View article: CCDC 1865464: Experimental Crystal Structure Determination
CCDC 1865464: Experimental Crystal Structure Determination Open
View article: CCDC 2111887: Experimental Crystal Structure Determination
CCDC 2111887: Experimental Crystal Structure Determination Open
View article: CCDC 2111883: Experimental Crystal Structure Determination
CCDC 2111883: Experimental Crystal Structure Determination Open
View article: CCDC 2111884: Experimental Crystal Structure Determination
CCDC 2111884: Experimental Crystal Structure Determination Open
View article: Tackling Disorder in $γ$-Ga$_2$O$_3$
Tackling Disorder in $γ$-Ga$_2$O$_3$ Open
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a ran…
View article: Molecular beam epitaxy of single-crystalline bixbyite <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi mathvariant="normal">In</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> films (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>x</mml:mi><mml:mo>≤</mml:mo><mml:mn>0.18</mml:mn></mml:mrow></mml:math>): Structural properties and consequences of compositional inhomogeneity
Molecular beam epitaxy of single-crystalline bixbyite films (): Structural properties and consequences of compositional inhomogeneity Open
In this work, we show the heteroepitaxial growth of single-crystalline\nbixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized\nzirconia substrates using plasma-assisted molecular beam epitaxy under various\ngrowth …
View article: Small compound – big colors: synthesis and structural investigation of brightly colored alkaline earth metal 1,3-dimethylviolurates
Small compound – big colors: synthesis and structural investigation of brightly colored alkaline earth metal 1,3-dimethylviolurates Open
A series of brightly colored (“pantochromic”) alkaline earth metal 1,3-dimethylviolurates AE(Me 2 Vio) 2 have been prepared and fully characterized.
View article: Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity
Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity Open
In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy under various growth con…
View article: The impurity size-effect and phonon deformation potentials in wurtzite GaN
The impurity size-effect and phonon deformation potentials in wurtzite GaN Open
Doping induced changes in lattice parameters are investigated experimentally for the shallow donors silicon and germanium in thin-film wurtzite a-plane GaN. Silicon doping results in a lattice contraction while germanium doping results in …