Emilio Corte
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View article: Photoactivation of Color Centers Induced by CW Laser Irradiation in Ion-Implanted Diamond
Photoactivation of Color Centers Induced by CW Laser Irradiation in Ion-Implanted Diamond Open
Split-vacancy color centers in diamonds are promising solid-state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low-energy ion implantation and subsequent thermal …
View article: The development of IBIC microscopy at the 100 kV ion implanter of the University of Torino (LIUTo) and the application for the assessment of the radiation hardness of a silicon photodiode
The development of IBIC microscopy at the 100 kV ion implanter of the University of Torino (LIUTo) and the application for the assessment of the radiation hardness of a silicon photodiode Open
The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes, …
View article: Photoactivation of color centers induced by laser irradiation in ion-implanted diamond
Photoactivation of color centers induced by laser irradiation in ion-implanted diamond Open
Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal a…
View article: Efficient Fabrication of High‐Density Ensembles of Color Centers via Ion Implantation on a Hot Diamond Substrate
Efficient Fabrication of High‐Density Ensembles of Color Centers via Ion Implantation on a Hot Diamond Substrate Open
Nitrogen‐vacancy (NV) centers in diamonds are one of the most promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on th…
View article: Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate Open
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of…
View article: Study of W centers formation in silicon upon ion implantation and rapid thermal annealing
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing Open
The recent demonstration of optically active telecom emitters in silicon has paved the way for realizing industrial-scale silicon-based solid-state quantum photonic platforms. The scientific community has been pursuing the implementation o…
View article: Efficiency Optimization of Ge‐V Quantum Emitters in Single‐Crystal Diamond upon Ion Implantation and HPHT Annealing
Efficiency Optimization of Ge‐V Quantum Emitters in Single‐Crystal Diamond upon Ion Implantation and HPHT Annealing Open
The authors report on the characterization at the single‐defect level of germanium‐vacancy (GeV) centers in diamond produced upon Ge − ion implantation and different subsequent annealing processes, with a specific focus on the effect of hi…
View article: Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing Open
The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conve…
View article: Engineering Multicolor Radiative Centers in hBN Flakes by Varying the Electron Beam Irradiation Parameters
Engineering Multicolor Radiative Centers in hBN Flakes by Varying the Electron Beam Irradiation Parameters Open
Recently, hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. In this work, multicolor radiative emissions are engineered and tailored by position-controlled low-energy elec…
View article: Magnesium-Vacancy Optical Centers in Diamond
Magnesium-Vacancy Optical Centers in Diamond Open
We provide the first systematic characterization of the structural and photoluminescence properties of optically active centers fabricated upon implantation of 30-100 keV Mg+ ions in synthetic diamond. The structural configurations of Mg-r…
View article: Spectral Emission Dependence of Tin‐Vacancy Centers in Diamond from Thermal Processing and Chemical Functionalization
Spectral Emission Dependence of Tin‐Vacancy Centers in Diamond from Thermal Processing and Chemical Functionalization Open
A systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing is reported. Three spectral lines at 620, 631, and 647 nm are ide…
View article: Spectral features of Pb-related color centers in diamond – a systematic photoluminescence characterization
Spectral features of Pb-related color centers in diamond – a systematic photoluminescence characterization Open
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in …
View article: Spectral Emission Dependence of Tin‐Vacancy Centers in Diamond from Thermal Processing and Chemical Functionalization
Spectral Emission Dependence of Tin‐Vacancy Centers in Diamond from Thermal Processing and Chemical Functionalization Open
We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are…