Eric Colegrove
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View article: Nm-scale electrical resistance imaging on CdTe by scanning spreading resistance microscopy
Nm-scale electrical resistance imaging on CdTe by scanning spreading resistance microscopy Open
Local resistance imaging can provide information on nm-scale carrier distribution in semiconductor devices. Scanning spreading resistance microscopy (SSRM), an atomic force microscopy-based nm-scale resistance mapping technique, has been d…
View article: High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing
High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing Open
Single-crystal model systems are valuable tools to investigate fundamental material properties. In this work, we use molecular beam epitaxy to deposit in situ arsenic (As) doped single-crystal CdTe films on large area Si substrates to bett…
View article: Arsenic activation and compensation in single crystal CdTe bilayers
Arsenic activation and compensation in single crystal CdTe bilayers Open
In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dop…
View article: Data for "Arsenic Activation and Compensation in Single Crystal CdTe Bilayers"
Data for "Arsenic Activation and Compensation in Single Crystal CdTe Bilayers" Open
View article: Grain boundary strain localization in a CdTe solar cell revealed by scanning 3D X-ray diffraction microscopy
Grain boundary strain localization in a CdTe solar cell revealed by scanning 3D X-ray diffraction microscopy Open
Scanning 3DXRD was used to visualize strain localization at grain boundaries with a high spatial resolution of 100 nm.
View article: Distribution of Copper States, Phases, and Defects across the Depth of a Cu-Doped CdTe Solar Cell
Distribution of Copper States, Phases, and Defects across the Depth of a Cu-Doped CdTe Solar Cell Open
Copper has been used as a p-type dopant in cadmium telluride (CdTe) for decades. However, the density of Cu atoms in the finished device is much higher than that of holes, which means that most Cu atoms are not activated as acceptors durin…
View article: Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells
Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells Open
After a focused effort over the last decade, order‐of‐magnitude improvements in doping and electro‐optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells.…
View article: Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells
Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells Open
View article: Methods of growing CdTe-based materials at high rates
Methods of growing CdTe-based materials at high rates Open
Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of great…
View article: Controlling the stoichiometry and doping of semiconductor materials
Controlling the stoichiometry and doping of semiconductor materials Open
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element.…
View article: Quantitative analysis of Cu XANES spectra using linear combination fitting of binary mixtures simulated by FEFF9
Quantitative analysis of Cu XANES spectra using linear combination fitting of binary mixtures simulated by FEFF9 Open
View article: Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices
Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices Open
As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Giv…
View article: Investigating the Role of Copper in Arsenic Doped Cd(Se,Te) Photovoltaics
Investigating the Role of Copper in Arsenic Doped Cd(Se,Te) Photovoltaics Open
View article: Revealing the Importance of Front Interface Quality in Highly Doped CdSe<sub><i>x</i></sub>Te<sub>1–<i>x</i></sub> Solar Cells
Revealing the Importance of Front Interface Quality in Highly Doped CdSe<sub><i>x</i></sub>Te<sub>1–<i>x</i></sub> Solar Cells Open
As carrier concentration improves in CdTe-based solar cells, modeling shows that the front interface becomes a bottleneck for performance. Optimization of the front interface has proven difficult, however, because it both is buried and evo…
View article: The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells
The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells Open
View article: Exceeding 200 ns Lifetimes in Polycrystalline CdTe Solar Cells
Exceeding 200 ns Lifetimes in Polycrystalline CdTe Solar Cells Open
CdTe photovoltaics has achieved one of the lowest levelized costs of electricity among all energy sources. However, for decades, carrier lifetimes have been inferior to those of other prevalent solar cell materials. This quality has inhibi…
View article: 3D/2D passivation as a secret to success for polycrystalline thin-film solar cells
3D/2D passivation as a secret to success for polycrystalline thin-film solar cells Open
View article: Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices
Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices Open
In CdTe photovoltaic devices, the CdTe layer must be doped with Cu to reduce its resistivity, increase carrier lifetime, and improve hole transport. However, the Cu concentration is typically very low around the interfaces and within the C…
View article: Direct Microscopy Imaging of Nonuniform Carrier Transport in Polycrystalline Cadmium Telluride
Direct Microscopy Imaging of Nonuniform Carrier Transport in Polycrystalline Cadmium Telluride Open
View article: Se diffusion in CdTe thin films for photovoltaics
Se diffusion in CdTe thin films for photovoltaics Open
Manipulating CdSeTe bandgrading to enhance photocurrent and carrier lifetime is an essential part of high-performance CdTe photovoltaics (PVs). In this work, we examine Se diffusion kinetics in single-crystal and polycrystalline CdTe durin…
View article: Roles of bandgrading, lifetime, band alignment, and carrier concentration in high-efficiency CdSeTe solar cells
Roles of bandgrading, lifetime, band alignment, and carrier concentration in high-efficiency CdSeTe solar cells Open
CdSeTe alloying has significantly increased the efficiency of CdTe-based solar technology. Here, computational modeling compares how different CdSeTe bandgrading, carrier lifetimes, band alignment, and carrier concentrations contribute to …
View article: Optimization of source material for in-situ Arsenic doping via vapor transport deposition of CdTe films
Optimization of source material for in-situ Arsenic doping via vapor transport deposition of CdTe films Open
In this work, in-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020…
View article: Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy
Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy Open
View article: Thin-Film Solar Cells with 19% Efficiency by Thermal Evaporation of CdSe and CdTe
Thin-Film Solar Cells with 19% Efficiency by Thermal Evaporation of CdSe and CdTe Open
CdTe-based solar cells exhibiting 19% power conversion efficiency were produced using widely available thermal evaporation deposition of the absorber layers on SnO2-coated glass with or without a transparent MgZnO buffer layer. Evaporating…
View article: Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors Open
View article: CdTe synthesis and crystal growth using the high-pressure Bridgman technique
CdTe synthesis and crystal growth using the high-pressure Bridgman technique Open
View article: Strain Mapping of CdTe Grains in Photovoltaic Devices
Strain Mapping of CdTe Grains in Photovoltaic Devices Open
Strain within grains and at grain boundaries (GBs) in polycrystalline thin-film absorber layers limits the overall performance because of higher defect concentrations and band fluctuations. Yet, the nanoscale strain distribution in operati…
View article: Recombination and bandgap engineering in CdSeTe/CdTe solar cells
Recombination and bandgap engineering in CdSeTe/CdTe solar cells Open
Selenium compositional grading in CdTe-based thin-film solar cells substantively improves carrier lifetime and performance. However, where and how recombination lifetime improves has not been studied significantly. Here, we deposit a CdSex…
View article: Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics
Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics Open
MgxZn1-xO (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling …
View article: Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping Open