Eric N. Jin
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View article: Terahertz carrier dynamics in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mi>SrTi</mml:mi> <mml:msub> <mml:mi mathvariant="normal">O</mml:mi> <mml:mn>3</mml:mn> </mml:msub> </mml:mrow> <mml:mo>/</mml:mo> <mml:mrow> <mml:mi>LaTi</mml:mi> <mml:msub> <mml:mi mathvariant="normal">O</mml:mi> <mml:mn>3</mml:mn> </mml:msub> </mml:mrow> </mml:math> interfacial two-dimensional electron gases
Terahertz carrier dynamics in interfacial two-dimensional electron gases Open
A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like SrTi O 3 (STO) and LaTi O 3 (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The in…
View article: THz carrier dynamics in $SrTiO_{3}/LaTiO_{3}$ interface two-dimensional electron gases
THz carrier dynamics in $SrTiO_{3}/LaTiO_{3}$ interface two-dimensional electron gases Open
A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like $SrTiO_{3}$ (STO) and $LaTiO_{3}$ (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interfac…
View article: Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis
Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis Open
A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly repres…
View article: Passivation of aluminum mirrors with SF<sub>6</sub>- or NF<sub>3</sub>-based plasmas
Passivation of aluminum mirrors with SF<sub>6</sub>- or NF<sub>3</sub>-based plasmas Open
This research compares the use of NF 3 and SF 6 process gases for the removal of the native oxide from Al mirrors and their subsequent fluorination using low-temperature electron-beam generated plasmas. This single step process produces a …
View article: Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy
Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy Open
High ScN fraction ScxAl1−xN has promise in important application areas including wide bandwidth RF resonators and filters, and ferroelectric devices such as non-volatile memory, but demands high crystal quality. In this work, the role of t…
View article: Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures
Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures Open
Heterogeneous integration of functional oxides with ultra-wide bandgap (UWBG) semiconductors is desired for the realization of novel hybrid systems applicable to a wide array of commercial electronics and defense applications. In this work…
View article: Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures Open
Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical prop…
View article: Crystalline Phase Control in Sc<sub>x</sub>Al<sub>x-1</sub>N Grown by Molecular Beam Epitaxy
Crystalline Phase Control in Sc<sub>x</sub>Al<sub>x-1</sub>N Grown by Molecular Beam Epitaxy Open
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View article: Band alignment of ScxAl1-xN/GaN heterojunctions
Band alignment of ScxAl1-xN/GaN heterojunctions Open
ScAlN is an emergent ultrawide-band-gap\nmaterial with both a high\npiezoresponse and demonstrated ferroelectric polarization switching.\nRecent demonstration of epitaxial growth of ScAlN on GaN has unlocked\nprospects for new high-power t…
View article: Two-dimensional electron gas oxide remote doping of Si(001)
Two-dimensional electron gas oxide remote doping of Si(001) Open
We demonstrate the integration of a two-dimensional electron gas (2DEG) oxide structure composed of $\mathrm{LaTi}{\mathrm{O}}_{3}/\mathrm{SrTi}{\mathrm{O}}_{3}$ (LTO/STO) on undoped Si(001) that possesses the attractive attributes of high…
View article: Electronic transport of titanate heterostructures and their potential as channels on (001) Si
Electronic transport of titanate heterostructures and their potential as channels on (001) Si Open
Perovskite oxides and their heterostructures have demonstrated considerable potential for devices that require high carrier densities. These oxides are typically grown on ceramic substrates that suffer from low thermal conductivity, which …