Étienne Okada
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View article: On the origin and suppression of parasitic channel in AlN/GaN/AlGaN back barrier RF devices
On the origin and suppression of parasitic channel in AlN/GaN/AlGaN back barrier RF devices Open
This work investigates the origin and physical location of a parasitic conduction path in GaN devices incorporating an AlGaN back barrier (BB) through a combined approach of calibrated Technology Computer-Aided Design (TCAD) simulations an…
View article: Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs
Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs Open
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View article: GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement Open
[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters f…
View article: Short-term reliability assessment of sub-micron thick AlN/GaN-on-Silicon HEMTs grown by MBE for RF applications
Short-term reliability assessment of sub-micron thick AlN/GaN-on-Silicon HEMTs grown by MBE for RF applications Open
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View article: Impact of Carbon-doped AlGaN back barrier in AlN/GaN/AlGaN HEMTs
Impact of Carbon-doped AlGaN back barrier in AlN/GaN/AlGaN HEMTs Open
The impact of carbon doping into the AlGaN back barrier in AlN/GaN HEMTs is investigated. In this work, we demonstrate that a back polarization itself is not enough to ensure a proper electron confinement under high field, especially when…
View article: Investigation of the origin of deep levels in Carbon-doped AlN/GaN/AlGaN HEMTs
Investigation of the origin of deep levels in Carbon-doped AlN/GaN/AlGaN HEMTs Open
In this work, we focused on understanding the origin and impact of deep levels in various AlN/GaN HEMTs with carbon doped GaN buffer including or not an AlGaN back barrier. It is shown that the inclusion of a back barrier reduces drastica…
View article: Thermoelectric characterization of crystalline nano-patterned silicon membranes
Thermoelectric characterization of crystalline nano-patterned silicon membranes Open
Thermoelectric characterization of built-in devices designed using a silicon-on-insulator substrate to extract the Seebeck coefficient, electrical conductivity and thermal conductivity of 60 nm thick crystalline silicon membranes.
View article: Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects
Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects Open
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View article: On-wafer RF high-power measurement with an LSMO load at 40 GHz
On-wafer RF high-power measurement with an LSMO load at 40 GHz Open
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View article: Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz
Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz Open
In this paper, we report electrical results and handling power results of different Schottky diodes based on 620 nm of n- Gallium Nitride (GaN) fabricated on ammonothermal GaN substrate. The breakdown voltage obtained is 115 V/µm. Diodes h…
View article: Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs
Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs Open
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View article: Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes
Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes Open
In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency pow…
View article: Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier Open
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention …
View article: A micro-electro-mechanical accelerometer based on gallium nitride on silicon
A micro-electro-mechanical accelerometer based on gallium nitride on silicon Open
We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a micro-electro-mechanical-system technology starting from an AlGaN/GaN heterostructure…
View article: High-speed uni-traveling-carrier photodiodes on silicon nitride
High-speed uni-traveling-carrier photodiodes on silicon nitride Open
Integrated photonics is an emerging technology for many existing and future telecommunication and data communication applications. One platform of particular interest is silicon nitride (SiN), thanks to—among others—its very low-loss waveg…
View article: Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances
Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances Open
We report on a vertically scaled AlN/GaN high electron mobility transistor technology design optimization for millimeter-wave applications. The undoped GaN channel thickness and carbon concentration into the buffer are extensively varied a…
View article: Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension
Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension Open
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits that are able to meet highly challenging RF front end specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for…
View article: Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V Open
We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a d…
View article: [Invited] Functional packaging of RF, mmW and photonic functions based on femtosecond laser micromachining
[Invited] Functional packaging of RF, mmW and photonic functions based on femtosecond laser micromachining Open
The increasing difficulty to pursue the aggressive objectives of Moore's law (More-Moore) has in parallel favored the emergence of integration solutions grouped under the term More-than-Moore, allowing to enrich silicon technologies by het…
View article: Above 70% PAE in Q-band with AlN/GaN HEMTs structures
Above 70% PAE in Q-band with AlN/GaN HEMTs structures Open
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View article: Development of a Millimeter-Long Travelling Wave THz Photomixer
Development of a Millimeter-Long Travelling Wave THz Photomixer Open
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View article: Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors
Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors Open
Surface plasmon resonance (SPR) sensing is a well-established high-sensitivity, label-free and real-time detection technique for biomolecular interaction study. Its primary working principle consists of the measurement of the optical refra…
View article: Design of tunable power detector towards <scp>5G</scp> applications
Design of tunable power detector towards <span>5G</span> applications Open
This paper presents the design and characterization of two tunable power detectors, based on PN diodes, integrated in SiGe 55‐nm BiCMOS technology from ST‐Microelectronics. The working frequency band of the circuits is (35‐50) GHz dedicate…
View article: Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing Open
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
View article: Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing Open
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing