F. Bilchenko
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View article: Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped <i>p</i> ‐AlGaN‐Layers
Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped <i>p</i> ‐AlGaN‐Layers Open
AlGaN‐based far‐ultraviolet‐C light emitting diodes (far‐UVC LEDs) with an emission wavelength of 233 nm and a peak external quantum efficiency () of 1% are explored to derive the radiative recombination efficiency (), the light extraction…
View article: 234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer Open
Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their emission power, voltage, and leakage current. …