F. Ren
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View article: Analysis of the Current Status of Healthy Working Life Expectancy in Shandong Province
Analysis of the Current Status of Healthy Working Life Expectancy in Shandong Province Open
This paper focuses on the "Healthy China" strategy and the background of the gradual retirement policy, and conducts research on the healthy working life expectancy in Shandong Province in response to the deepening of the aging population,…
View article: Fully Transparent Lateral AlN Schottky Barrier Diodes with ITO Contacts
Fully Transparent Lateral AlN Schottky Barrier Diodes with ITO Contacts Open
Fully transparent lateral Aluminum Nitride (AlN) rectifiers with Indium Tin Oxide ( ITO) Ohmic and Schottky contacts offer a promising combination of optical transparency, high performance and durability, making them suitable for applicati…
View article: Contrasting magnetic anisotropy in CrCl3 and CrBr3: A first-principles study
Contrasting magnetic anisotropy in CrCl3 and CrBr3: A first-principles study Open
We present a first-principles study of the contrasting easy magnetization axes(EMAs) in the layered chromium trihalides CrCl3 and CrBr3, which exhibit in-plane and out-of-plane EMAs, respectively. Using density-functional theory calculatio…
View article: Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors
Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors Open
High‐temperature annealing remains the primary technique for mitigating radiation damage in electronic devices. In this study, a novel alternative is demonstrated that is capable of operating at room temperature within minutes, specificall…
View article: STAT5B REGULATES SEXUAL DIMORPHISM IN HEPATIC GLUCOSE METABOLISM IN ZEBRAFISH
STAT5B REGULATES SEXUAL DIMORPHISM IN HEPATIC GLUCOSE METABOLISM IN ZEBRAFISH Open
View article: Electron beam irradiation-induced transport and recombination in p-type gallium oxide grown on (001) <i>β</i>-Ga2O3 substrate
Electron beam irradiation-induced transport and recombination in p-type gallium oxide grown on (001) <i>β</i>-Ga2O3 substrate Open
This study investigates minority electron diffusion length and carrier recombination phenomena in p-type 300 nm-thick Ga2O3 films homoepitaxially grown over a (001) tin-doped β-Ga2O3 conductive substrate. This research is novel due to its …
View article: Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance
Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance Open
This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhanci…
View article: Coordinated variation in leaf economics, hydraulics, and anatomy of <i>Quercus variabilis</i> along an environmental gradient
Coordinated variation in leaf economics, hydraulics, and anatomy of <i>Quercus variabilis</i> along an environmental gradient Open
Leaf economic, hydraulic, and anatomical traits play crucial roles in plant adaptation to diverse and variable environments. However, their relationships at the intraspecific level remain unclear. In this study, we investigated Quercus var…
View article: Yttrium Ion Release and Phase Transformation in Yttria-Stabilized Zirconia Under Acidic Conditions: Implications for Dental Implant Durability
Yttrium Ion Release and Phase Transformation in Yttria-Stabilized Zirconia Under Acidic Conditions: Implications for Dental Implant Durability Open
The stability of yttria-stabilized zirconia (YSZ) as a dental implant material is highly dependent on its resistance to low-temperature degradation (LTD) and surface dissolution, particularly in acidic oral environments. This study investi…
View article: Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience
Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience Open
Resilience to ionizing radiation is crucial for electronic devices in space and nuclear applications. Traditionally, this is achieved through new design, materials, shielding, or redundancy strategies. In this study, we demonstrate a new a…
View article: Bio-friendly and low-cost luminescent detection of CO2 using an AIE-active zinc-coordination polymer
Bio-friendly and low-cost luminescent detection of CO2 using an AIE-active zinc-coordination polymer Open
View article: Room temperature annealing of gamma irradiated SiC JFETs using electron wind force
Room temperature annealing of gamma irradiated SiC JFETs using electron wind force Open
Electron wind force (EWF) is a mechanical stimulus that can transport mass in metallic interconnects, but its effectiveness in mobilizing defects in semiconductors is relatively less studied. We explored the potential of EWF annealing as a…
View article: A High-Sensitivity, Bluetooth-Enabled PCB Biosensor for HER2 and CA15-3 Protein Detection in Saliva: A Rapid, Non-Invasive Approach to Breast Cancer Screening
A High-Sensitivity, Bluetooth-Enabled PCB Biosensor for HER2 and CA15-3 Protein Detection in Saliva: A Rapid, Non-Invasive Approach to Breast Cancer Screening Open
Breast cancer is a leading cause of cancer-related mortality worldwide, requiring efficient diagnostic tools for early detection and monitoring. Human epidermal growth factor receptor 2 (HER2) is a key biomarker for breast cancer classific…
View article: Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond
Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond Open
We report the band alignments of ITO/diamond and AZO/diamond heterostructures, comparing hydrogen-terminated (H-diamond) and non-hydrogenated (O-diamond) surfaces using x-ray photoelectron spectroscopy (XPS). For O-terminated diamond, both…
View article: High-Sensitivity, Bluetooth-Enabled PCB Biosensor for HER2 and CA15-3 Protein Detection in Saliva: A Rapid, Non-Invasive Approach to Breast Cancer Screening
High-Sensitivity, Bluetooth-Enabled PCB Biosensor for HER2 and CA15-3 Protein Detection in Saliva: A Rapid, Non-Invasive Approach to Breast Cancer Screening Open
Breast cancer is a leading cause of cancer-related mortality worldwide, requiring efficient diagnostic tools for early detection and monitoring. The human epidermal growth factor receptor 2 (HER2) is a key biomarker for breast cancer class…
View article: Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications
Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications Open
Multilayer transition metal dichalcogenides (ML‐TMDs) with commensurate, incommensurate, and reconstructed structures, have emerged as a class of 2D materials with unique properties that differ significantly from their monolayer counterpar…
View article: Perspective on comparative radiation hardness of Ga2O3 polymorphs
Perspective on comparative radiation hardness of Ga2O3 polymorphs Open
Gallium oxide (Ga2O3) exists in different polymorphic forms, including the trigonal (α), monoclinic (β), cubic (γ), and orthorhombic (κ) phases, each exhibiting distinct structural and electronic properties. Among these, β-Ga2O3 is the mos…
View article: Fabrication of TiO2 Nanotube Arrays by Progressive Anodization of Ti Thin Film on Insulated Substrates
Fabrication of TiO2 Nanotube Arrays by Progressive Anodization of Ti Thin Film on Insulated Substrates Open
Titanium (Ti) thin films deposited on insulated substrates were progressively anodized and formed titanium dioxide (TiO2) nanotube arrays on the surface through a customized anodization tool designed to improve the uniformity and diameters…
View article: High temperature operation and failure of Ga2O3 Schottky barrier diodes: An <i>in situ</i> TEM study
High temperature operation and failure of Ga2O3 Schottky barrier diodes: An <i>in situ</i> TEM study Open
The β-polymorph gallium oxide (Ga2O3) is a promising material for next generation power electronics in extreme environments due to its ultra-wide bandgap with a high theoretical breakdown electric field. However, there is a gap between the…
View article: Room Temperature Annealing of Gamma Radiation Damage in Zener Diodes
Room Temperature Annealing of Gamma Radiation Damage in Zener Diodes Open
Gamma radiation is detrimental to semiconductor-based sensors or instrumentation. The ensuing damage can be very difficult to repair with conventional annealing approaches, particularly in as-deployed conditions. This study proposes applic…
View article: Improving radiation tolerance with room temperature annealing of pre-existing defects
Improving radiation tolerance with room temperature annealing of pre-existing defects Open
Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We pr…
View article: Effects of Wear-Induced Surface Roughness and Pore Taper on the Performance of Porous ZnS/Ag High-Temperature Solar Absorbers
Effects of Wear-Induced Surface Roughness and Pore Taper on the Performance of Porous ZnS/Ag High-Temperature Solar Absorbers Open
View article: Changes in the soil fungal community in a temperate deciduous forest at different altitudes in the Taihang Mountains
Changes in the soil fungal community in a temperate deciduous forest at different altitudes in the Taihang Mountains Open
View article: Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation
Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation Open
Point defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs) by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and luminescent characteristics. The 5 MeV electron irradiation…
View article: Improving radiation resilience of zener diodes through preemptive and restorative electron wind force annealing
Improving radiation resilience of zener diodes through preemptive and restorative electron wind force annealing Open
Semiconductor devices contain defects and localized mechanical stress even in their pristine states, persisting after post-fabrication annealing. We hypothesize that these pre-existing conditions, with their lower threshold energy for defe…
View article: The analgesic effect of continuous adductor canal block combined with popliteal plexus block for total knee arthroplasty: a randomized controlled trial
The analgesic effect of continuous adductor canal block combined with popliteal plexus block for total knee arthroplasty: a randomized controlled trial Open
This study aimed to confirm the hypothesis that continuous ACB (CACB) combined with a popliteal plexus block (PPB) can improve posterior knee pain, reduce nalbuphine consumption, and shorten the length of hospital stay. Patients who underw…
View article: Osteoblast Growth in Quaternized Silicon Carbon Nitride Coatings for Dental Implants
Osteoblast Growth in Quaternized Silicon Carbon Nitride Coatings for Dental Implants Open
The demand for dental implants has increased, establishing them as the standard of care for replacing missing teeth. Several factors contribute to the success or failure of an implant post-placement. Modifications to implant surfaces can e…
View article: EBIC studies of minority electron diffusion length in undoped p-type gallium oxide
EBIC studies of minority electron diffusion length in undoped p-type gallium oxide Open
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope.…
View article: Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors
Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors Open
Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can …
View article: Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers
Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers Open
Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environmen…