Explanipedia

Boron distribution in two-phase superconducting silicon-on-insulator by atom probe tomography Open

Paul Dumas, S. Duguay, D. Blavette, Mathieu Opprecht, S. Kerdilès , et al. · 2025

We investigate with Atom Probe Tomography (APT) the distribution of boron in a thin superconducting Silicon-On-Insulator film (33 nm) obtained by high-dose ion implantation (2.5 × 1016 at/cm2) and single-pulse laser melting (160 ns). Only …

Enhancing superconductivity in CoSi2 films with laser annealing Open

Paul Dumas, F. Gustavo, Mathieu Opprecht, Guillaume Freychet, Patrice Gergaud , et al. · 2024

Laser annealing was employed to trigger the solid-state reaction of a thin Co film (2.5 nm) with undoped Si. A metastable disilicide layer was obtained after one laser pulse close to the melt threshold. Its diffraction pattern, relaxed lat…

Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant Open

Paul Dumas, Mathieu Opprecht, S. Kerdilès, János L. Lábár, B. Pécz , et al. · 2023

33 nm thick silicon on insulator films were implanted with boron at high dose (1.5 × 1016 or 2.5 × 1016 at/cm2) and low energy (3 or 4 keV), then further annealed with 160 ns laser pulses. When the laser energy is set such as to lead to th…

Feasibility of Wafer Exchange for European Edge AI Pilot Lines Open

Annika Franziska Wandesleben, Delphine Truffier‐Boutry, Varvara Brackmann, Benjamin Uhlig, Manoj Jaysnkar , et al. · 2023

This paper compares the contamination monitoring of the three largest microelectronics research organizations in Europe, CEA-Leti, imec and Fraunhofer. The aim is to align the semiconductor infrastructure of the three research institutes t…

Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms Open

S. Guillemin, Patrice Gergaud, Nicolas Bernier, Laurent Lachal, F. Mazen , et al. · 2021

Superconducting V3Si for quantum circuit applications Open

Tom Doekle Vethaak, F. Gustavo, Thierry Farjot, Tomáš Kubart, Patrice Gergaud , et al. · 2021

Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes Open

S. Bensalem, E. Ghegin, F. Boyer, János L. Lábár, M. Menyhárd , et al. · 2020

Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers Open

F. Boyer, Patrice Gergaud, Karen Dabertrand, D. Mariolle, Christophe Jany , et al. · 2020

The integration of III-V/Si hybrid lasers on a 300 mm platform for photonic applications requires the development of dedicated CMOS-compatible contacts, for which nickel-based ones are very good candidates. In this scope, this work present…

Building blocks of silicon photonics Open

Laurent Vivien, Charles Baudot, F. Bœuf, Bertrand Szelag, Carlos Alonso‐Ramos , et al. · 2019

International audience

Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates Open

Mathilde Lemang, Philippe Rodriguez, F. Nemouchi, M. Juhel, M. Grégoire , et al. · 2018

Phosphorus diffusion and its distribution during the solid-state reactions between Ni0.9Pt0.1 and implanted Si substrates are studied. Silicidation is achieved through a first rapid thermal annealing followed by a selective etching and a d…

Three-dimensional reciprocal-space map measurements for ultrathin polycrystalline materials Open

Jayanth Channagiri, Seifeddine Zhiou, Philippe Rodriguez, F. Nemouchi, Nils Blanc , et al. · 2017

The engineering of materials has a significant importance in the miniaturization of microelectronic devices considering the fact that many mechanical and electronic properties of devices are strongly dependent on the coexistent phases and …

Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM Open

Philippe Rodriguez, R. Famulok, Y. Le Friec, J.-P. Reynard, Benoit-Noel Bozon , et al. · 2017

Phase formation sequence in the Ti/InP system during thin film solid-state reactions Open

E. Ghegin, Philippe Rodriguez, János L. Lábár, M. Menyhárd, S. Favier , et al. · 2017

The metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a react…

Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges Open

J. Borrel, Louis Hutin, Donato Kava, R. Gassilloud, Nicolas Bernier , et al. · 2017

International audience

Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture Open

Seifeddine Zhiou, Tra Nguyen-Thanh, Philippe Rodriguez, F. Nemouchi, Laëtitia Rapenne , et al. · 2016

The solid-state reaction between Ni and In0.53Ga0.47As on an InP substrate was studied by X-ray diffraction (XRD) and scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy techniques. Due to the monocrystalline str…

Contacts for monolithic 3D architecture: Study of Ni0.9Co0.1 silicide formation Open

Philippe Rodriguez, S. Favier, F. Nemouchi, C. Sésé, Fabien Deprat , et al. · 2016

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Towards contact integration for III–V/Silicon heterogeneous photonics devices Open

E. Ghegin, Philippe Rodriguez, F. Nemouchi, Ch. Jany, M. Brihoum , et al. · 2016

International audience

Study of the formation and degradation of intermetallics formed by solid-state reaction of Ni on InGaAs Open

Seifeddine Zhiou, Thanh Tra Nguyen, Philippe Rodriguez, F. Nemouchi, Patrice Gergaud · 2016

International audience

Étude de la texture cristallographique de composés intermétalliques obtenus par réaction à l’état solide entre un film mince de Ni et un substrat InGaAs/Si Open

Seifeddine Zhiou, Thanh-Tra Nguyen, Philippe Rodriguez, F. Nemouchi, Patrice Gergaud · 2015

International audience

In situ cleaning of InGaAs surfaces prior to low contact resistance metallization Open

Philippe Rodriguez, Laura Toselli, E. Ghegin, Nicolas Chevalier, N. Rochat , et al. · 2015

Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications Open

Philippe Rodriguez, Laura Toselli, E. Ghegin, Mickaël Rebaud, N. Rochat , et al. · 2015

InGaAs and InP layers were treated by using Ar and He direct plasmas coupled with wet chemical treatments. InP surfaces are more sensitive to the various treatments than the InGaAs ones. Suitable and efficient treatments have been proposed…

InGaAs surface pretreatment prior to metal solid-state reactions for low resistance contacts Open

Philippe Rodriguez, Laura Toselli, E. Ghegin, N. Rochat, Nicolas Chevalier , et al. · 2015

International audience

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping Open

Seifeddine Zhiou, Philippe Rodriguez, Patrice Gergaud, F. Nemouchi, T. Nguyen Thanh · 2015

International audience

In situ cleaning/passivation of surfaces for contact technology on III-V materials Open

Philippe Rodriguez, Laura Toselli, E. Ghegin, F. Nemouchi, N. Rochat , et al. · 2015

International audience

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