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View article: Thin LGAD sensors for 4D tracking in high radiation environments: state of the art and perspectives
Thin LGAD sensors for 4D tracking in high radiation environments: state of the art and perspectives Open
This contribution summarises the outcomes of the CSN5 eXFlu research project. In particular, it presents the first exploration of the performance of very thin Low-Gain Avalanche Diode (LGAD) sensors, with a bulk active thickness ranging fr…
View article: Innovative DC-coupled resistive silicon detector for 4D tracking
Innovative DC-coupled resistive silicon detector for 4D tracking Open
View article: Thin LGADs as radiation-resilient sensors for 4D tracking
Thin LGADs as radiation-resilient sensors for 4D tracking Open
Precise tracking in space and time is becoming a more and more pivotal ingredient in designing high-energy physics experiments. Low-Gain Avalanche Diodes (LGADs) with an active thickness of ∼ 50 μm have proved the ability of silicon sensor…
View article: Characterization of the FBK-LGAD devices manufactured at an external foundry for large-volume productions
Characterization of the FBK-LGAD devices manufactured at an external foundry for large-volume productions Open
In recent years, the HEP detector community has shown an increasing interest in Low Gain Avalanche Diodes (LGADs) due to their excellent temporal resolution, good radiation resistance, and low material budget. An example of this is the upc…
View article: Irradiation studies of the Resistive AC-coupled Silicon Detector (RSD/AC-LGAD)
Irradiation studies of the Resistive AC-coupled Silicon Detector (RSD/AC-LGAD) Open
View article: Design and optimisation of radiation resistant AC- and DC-coupled resistive LGADs
Design and optimisation of radiation resistant AC- and DC-coupled resistive LGADs Open
Future high-energy physics experiments require a paradigm shift in radiation detector design. In response to this challenge, resistive LGADs that combine Low Gain Avalanche Diode technology with resistive readout have been developed. The p…
View article: First study of single-event burnout in very-thin planar silicon sensors
First study of single-event burnout in very-thin planar silicon sensors Open
This paper investigates the single-event burnout (SEB) effect in thin irradiated positive-intrinsic-negative (PiN) diodes and low-gain avalanche diodes (LGAD). SEB is a destructive event triggered in silicon sensors by the passage of a hig…
View article: FAST3 ASIC: an analog front-end with 30 ps resolution, designed to readout thin Low Gain Avalanche Diodes
FAST3 ASIC: an analog front-end with 30 ps resolution, designed to readout thin Low Gain Avalanche Diodes Open
This contribution presents a new version of the FAST (Fast Amplifier for Silicon detector for Timing) ASICs, called FAST3, and the more significant results from its characterization. The FAST3- Analog version is a 16-channel front-end elec…
View article: Thin silicon sensors for extreme fluences: A doping compensation strategy
Thin silicon sensors for extreme fluences: A doping compensation strategy Open
View article: TCAD investigation of Compensated LGAD Sensors for extreme fluence
TCAD investigation of Compensated LGAD Sensors for extreme fluence Open
A new gain layer design, whose effective doping profile results from the difference between two overlapping implants of opposite dopant species (e.g. boron and phosphorus), is conceived to extend the operational life of Low-Gain Avalanche …
View article: First test beam measurement of the 4D resolution of an RSD pixel matrix connected to a FAST2 ASIC
First test beam measurement of the 4D resolution of an RSD pixel matrix connected to a FAST2 ASIC Open
This paper presents the measurement of the spatial and temporal resolutions of a Resistive Silicon Detector (RSD) pixel matrix read out by the FAST2 ASIC, a 16-channel fully custom amplifier developed by INFN Torino using a 110 nm CMOS tec…
View article: The first batch of compensated LGAD sensors
The first batch of compensated LGAD sensors Open
A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrin…
View article: Characterization of thin carbonated LGADs after irradiation up to 2.5· 10<sup>15</sup> n<sub>1 Mev eq.</sub>/cm<sup>2</sup>
Characterization of thin carbonated LGADs after irradiation up to 2.5· 10<sup>15</sup> n<sub>1 Mev eq.</sub>/cm<sup>2</sup> Open
EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy). The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain…
View article: Design optimization of the UFSD inter-pad region
Design optimization of the UFSD inter-pad region Open
This paper reports on a measurement campaign to characterize the inter-pad region of Ultra-Fast Silicon Detectors (UFSDs) manufactured by Fondazione Bruno Kessler. The devices under test are either pixel or strip arrays, featuring a large …
View article: First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC
First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC Open
This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal …
View article: Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors
Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors Open
The recently developed Low-Gain Avalanche Diode (LGAD) technology has gained growing interest within the high-energy physics (HEP) community, thanks to its capability of internal signal amplification that improves the particle detection. S…
View article: Machine learning for precise hit position reconstruction in Resistive Silicon Detectors
Machine learning for precise hit position reconstruction in Resistive Silicon Detectors Open
RSDs are LGAD silicon sensors with 100% fill factor, based on the principle of AC-coupled resistive read-out. Signal sharing and internal charge multiplication are the RSD key features to achieve picosecond-level time resolution and micron…
View article: A new low gain avalanche diode concept: the double-LGAD
A new low gain avalanche diode concept: the double-LGAD Open
This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has …
View article: High-precision 4D tracking with large pixels using thin resistive silicon detectors
High-precision 4D tracking with large pixels using thin resistive silicon detectors Open
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, a…
View article: A new Low Gain Avalanche Diode concept: the double-LGAD
A new Low Gain Avalanche Diode concept: the double-LGAD Open
This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the char…
View article: Beam test results of 25 and 35 $$\mu$$m thick FBK ultra-fast silicon detectors
Beam test results of 25 and 35 $$\mu$$m thick FBK ultra-fast silicon detectors Open
View article: Resistive Read-out in Thin Silicon Sensors with Internal Gain
Resistive Read-out in Thin Silicon Sensors with Internal Gain Open
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mech…
View article: High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors Open
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, a…
View article: DC-coupled resistive silicon detectors for 4D tracking
DC-coupled resistive silicon detectors for 4D tracking Open
View article: Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution
Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution Open
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode desi…
View article: First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board
First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board Open
View article: Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors
Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors Open
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UF…
View article: The second production of RSD (AC-LGAD) at FBK
The second production of RSD (AC-LGAD) at FBK Open
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n -in- p detectors intended for 4D particle tracking ba…
View article: A compensated design of the LGAD gain layer
A compensated design of the LGAD gain layer Open
View article: Optimization of the gain layer design of ultra-fast silicon detectors
Optimization of the gain layer design of ultra-fast silicon detectors Open