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View article: Energetic Macroscopic Representation of a Partial Power Converter based Fuel Cell Electric Vehicle
Energetic Macroscopic Representation of a Partial Power Converter based Fuel Cell Electric Vehicle Open
International audience
View article: 1.1µm Backside Imager vs. Frontside Imager: an optics-dedicated FDTD approach
1.1µm Backside Imager vs. Frontside Imager: an optics-dedicated FDTD approach Open
In 2009 the race to miniaturization and high performance of CMOS image sensors lead companies to propose 1.4µm pixels and to develop 1.1µm pixels with high signal to noise ratio even at low light level. At this scale diffraction effects of…
View article: Back Illuminated Vertically Pinned Photodiode with in Depth Charge Storage
Back Illuminated Vertically Pinned Photodiode with in Depth Charge Storage Open
A novel 1.4µm pitch pixel architecture dedicated for backside process with embedded vertically pinned photodiode is investigated. The proof of a vertical pinning is made thanks to a study of the maximum diode depletion potential for differ…
View article: Improved colour separation for a backside illuminated image sensor with 1.4 µm pixel pitch
Improved colour separation for a backside illuminated image sensor with 1.4 µm pixel pitch Open
We demonstrate a back illuminated colour image sensor with a 1.4µm pixel pitch. A novel backside adapted pinned deep diode on n-substrates has been developed and characterized in order to achieve an improved colour separation. High quantum…
View article: Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing
Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing Open
This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as…
View article: Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose
Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose Open
International audience
View article: An Improved Process for Turbine Shroud Optimization in the Preliminary Design Phase
An Improved Process for Turbine Shroud Optimization in the Preliminary Design Phase Open
Larger turbine shroud will result in lower tip leakage losses but will increase the rotor mechanical stresses; hence optimization is necessary, especially at the preliminary design of the engine. The improved process developed is as follow…
View article: Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications Open
Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, char…
View article: P-type BSI Image Sensor with Active Deep Trench Interface Passivation for Radiation-hardened Imaging Systems
P-type BSI Image Sensor with Active Deep Trench Interface Passivation for Radiation-hardened Imaging Systems Open
We propose a P-type back-side-illuminated (BSI) image sensor for applications involving harsh ionizing environment. Its pixel structure implements a hole-collection vertical photodiode and 2T PMOS shared-readout circuitry. It also integrat…