Fedor V. Sharov
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View article: Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability
Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability Open
We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor fie…
View article: Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO<sub>2</sub> MOSFETs (June 2022)
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO<sub>2</sub> MOSFETs (June 2022) Open
Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically…
View article: A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance Open
Here, we utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO2 metal–oxide–silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected us…
View article: Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors Open
Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly impo…