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View article: GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources
GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources Open
Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of GaN QDs on AlN is achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflecti…
View article: Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates
Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates Open
AlN layers annealed at high temperatures offer low threading dislocation densities of mid 108 cm−2 and are therefore increasingly used as base layers in ultraviolet (UV) light emitting diode (LED) heterostructure growth. These LEDs, just l…
View article: Laser-assisted local metal–organic vapor phase epitaxy
Laser-assisted local metal–organic vapor phase epitaxy Open
Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking mater…
View article: Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties
Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties Open
We report on the formation process of GaN/AlN quantum dots (QDs) which arises after the deposition of 1–2 monolayers of GaN on an AlN/sapphire template followed by a distinct growth interruption (GRI). The influence of the duration of a GR…
View article: Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy
Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy Open
We present a pulsed reactive magnetron sputter process for high quality AlN on Si (1 1 1) beneficially avoiding any high-temperature growth. Initially, metallic aluminium with a nominal thickness of about one monolayer is deposited at a su…
View article: Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN
Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN Open
Freshly introduced a-screw dislocations in gallium nitride are an effective source of ultraviolet radiation, characterized by intense emission of narrow luminescence doublet lines in the spectral range of 3.1-3.2 eV. Furthermore, an additi…
View article: Intensive luminescence from a thick, indium-rich In<sub>0.7</sub>Ga<sub>0.3</sub>N film
Intensive luminescence from a thick, indium-rich In<sub>0.7</sub>Ga<sub>0.3</sub>N film Open
An In 0.7 Ga 0.3 N layer with a thickness of 300 nm deposited on GaN/sapphire template by molecular beam epitaxy has been investigated by highly spatially resolved cathodoluminescence (CL). High crystal film quality without phase separatio…
View article: CCDC 1572387: Experimental Crystal Structure Determination
CCDC 1572387: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …
View article: Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers
Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers Open
Journal Article Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers Get access Marcus Müller, Marcus Müller Institute of Experimental Physics, Otto-von-Guericke-University Magdebur…
View article: Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates
Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates Open
Despite the strong interest in optoelectronic devices working in the deep ultraviolet range, no suitable low cost, large-area, high-quality AlN substrates have been available up to now. The aim of this work is the selective area growth of …
View article: Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy Open
We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) In x Ga 1−x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular b…
View article: Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires Open
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited\nfor the fabrication of thin conformal intrawire InGaN nanoshells which host\nquantum dots in nonpolar, semipolar and polar crystal regions. All three\nquantum do…
View article: In situ luminescence analysis: a new light on monitoring calcium phosphate phase transitions
In situ luminescence analysis: a new light on monitoring calcium phosphate phase transitions Open
In situluminescence measurements allow monitoring the phase transitions of biologically relevant calcium phosphates with high sensitivity, independent of synchrotron radiation.
View article: Analytical electron microscopy characterization of light‐emitting diodes based on ordered <scp>InGaN</scp> nanocolumns
Analytical electron microscopy characterization of light‐emitting diodes based on ordered <span>InGaN</span> nanocolumns Open
Self‐assembled nanocolumns (NCs) with InGaN/GaN disks constitute an alternative to conventional light emitting diodes (LED) planar devices [1]. However, their efficiency and reliability are hindered by a strong dispersion of electrical cha…
View article: Quantitative STEM ‐ From composition to atomic electric fields
Quantitative STEM ‐ From composition to atomic electric fields Open
The image intensity in high‐angle annular dark field STEM images shows a strong chemical sensitivity. As it is also influenced by specimen thickness, crystal orientation as well as characteristics of illumination and detector, a standard‐f…
View article: Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations
Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations Open
Journal Article Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations Get access Gordon Schmidt, Gordon Schmidt Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germa…
View article: Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization Open
Crystal phase quantum dots (CPQD) embedded in a nanowire (NW) geometry have recently emerged as efficient single photon emitters. In typical III–V semiconductor NWs such CPQDs are linked to the well-known zincblende (ZB)/wurtzite (WZ) poly…
View article: Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires Open
This work reports an experimental and theoretical insight into phenomena of two-color emission and different electron-hole recombination dynamics in InGaN nanodisks, incorporated into pencil-like GaN nanowires. The studied nanodisks consis…
View article: Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs
Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs Open
A uniform array of gallium nitride core‐shell microrod (MR) light‐emitting diode (LED) structures was grown by metalorganic vapor phase epitaxy. Defects and the quantum well (QW) luminescence in an individual rod were investigated by scann…
View article: Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays Open
Single-photon emitters (SPEs) are at the basis of many applications for\nquantum information management. Semiconductor-based SPEs are best suited for\npractical implementations because of high design flexibility, scalability and\nintegrati…
View article: Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters Open
The realization of reliable single photon emitters operating at high\ntemperature and located at predetermined positions still presents a major\nchallenge for the development of solid-state systems for quantum light\napplications. We demon…