Florian Krippendorf
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View article: Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Open
Multi-step high energy ion implantation enables uniform doping to depths up to 12 µm in 4H-SiC epiwafers for superjunction devices but extent of lattice damage is of significant concern for device fabrication. 4H-SiC wafers with 12 µm thic…
View article: Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation Open
Bipolar degradation poses a significant concern for the reliability of SiC bipolar power devices. The basic cause for bipolar degradation is expansion of Shockley Stacking Faults SSFs. These glide planes can be pinned and prevented from ex…
View article: Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Open
The growing demand for 4H-SiC substrates in power device fabrication has encouraged the development of engineered substrates to reduce costs and facilitate wafer re-usability for effective material utilization. This work presents a novel a…
View article: Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements
Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements Open
Commercially available 4H-SiC substrate quality has improved over time, and this has extensively reduced defect concentration in the active epitaxial layer, during epi growth conditions at the interface. The objective of this work is to in…