Explanipedia

Clusters of vacancies in gallium nitride grown by MOCVD Open

František Hájek, Jakub Čı́žek, J. Kuriplach, Roman Hrytsak, Tomáš Hubáček , et al. · 2025

We investigate the formation and characteristics of vacancy clusters (VCs) in gallium nitride (GaN) grown by metal–organic chemical vapor deposition. The research identifies vacancy-type defects, particularly V Ga –H i complexes, using pos…

Radiation stability of nanocomposite scintillators Open

Lenka Procházková, František Hájek, M. Buryi, Z. Remeš, Václav Čuba · 2025

Is GGAG:Ce@SiO2-RB composite a prospective material for X-ray induced photodynamic therapy? Open

Iveta Terezie Hošnová, Kristýna Havlinová, Jan Bárta, Karolína Mocová, Kseniya Popovich , et al. · 2025

Clusters of Vacancies in Gallium Nitride Grown by Mocvd Open

František Hájek, Jakub Čı́žek, J. Kuriplach, Roman Hrytsak, Tomáš Hubáček , et al. · 2025

Towards high loading cesium lead halide nanocomposites for radiation detection Open

Jan Král, Kateřina Děcká, Vojtěch Zabloudil, Petr Liška, František Hájek , et al. · 2024

Cesium lead halide nanocrystals (NCs) and their nanocomposites have attracted a lot of attention in the field of radiation detection thanks to their excellent luminescent properties, especially their potential for fast timing. However, mos…

On the origin of the light yield enhancement in polymeric composite scintillators loaded with dense nanoparticles Open

Irène Villa, Angelo Monguzzi, Roberto Lorenzi, Matteo Orfano, Vladimír Babin , et al. · 2024

Fast emitting polymeric scintillators are requested in advanced applications where high-speed detectors with large signal-to-noise ratio are needed. However, their low density implies a weak stopping power of high energy radiations, thus a…

On the Origin of the Light Yield Enhancement in Polymeric Composite Scintillators Loaded with Dense Nanoparticles Open

Irène Villa, Angelo Monguzzi, Roberto Lorenzi, Matteo Orfano, Vladimír Babin , et al. · 2024

Fast emitting polymeric scintillators are requested in advanced applications where high speed detectors with a large signal-to-noise ratio are needed. However, their low density implies a weak stopping power of high energy radiation and th…

High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures Open

Aljoscha Söll, Edoardo Lopriore, Asmund Ottesen, Jan Luxa, Gabriele Pasquale , et al. · 2024

van der Waals heterostructures of two-dimensional materials have unveiled frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap, hig…

Peculiarities Related to Er Doping of ZnO Nanorods Simultaneously Grown as Particles and Vertically Arranged Arrays Open

M. Buryi, Z. Remeš, František Hájek, K. Kuldová, Vladimír Babin , et al. · 2023

A unique set of undoped and Er-doped ZnO nanorods that are grown by a hydrothermal method under exactly the same conditions in the form of 2D nanoarrays on the SiO2/ZnO substrate or in a free-standing form on random nucleation seeds in sol…

A high-$κ$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures Open

Aljoscha Söll, Edoardo Lopriore, Asmund Ottesen, Jan Luxa, Gabriele Pasquale , et al. · 2023

Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap…

Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn Open

František Hájek, Vítězslav Jarý, Tomáš Hubáček, Filip Dominec, A. Hospodková , et al. · 2023

We report luminescence decay characteristics of the InGaN/GaN scintillator heterostructures doped with Zn. Unusually large shifting of luminescence band caused by Zn acceptors incorporated in InGaN is observed both in time-resolved and exc…

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface Open

A. Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubı́k , et al. · 2023

This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional electron gas (2DEG) of high-electron mobility transistor (HEMT) structures. The widely used technology for the preparation of…

Effect of UV Irradiation on the Growth of ZnO:Er Nanorods and Their Intrinsic Defects Open

M. Buryi, Katarína Ridzoňová, Neda Neyková, Lucie Landová, František Hájek , et al. · 2023

Nanorods of erbium-doped zinc oxide (ZnO:Er) were fabricated using a hydrothermal method. One batch was prepared with and another one without constant ultraviolet (UV) irradiation applied during the growth. The nanorods were free-standing …

Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift in Ingan/Gan Scintillator Heterostructures Doped with Zn Open

František Hájek, Vítězslav Jarý, Tomáš Hubáček, Filip Dominec, A. Hospodková , et al. · 2023

Synthesis of the Cerium Doped Gd3Al3Ga2O12-Based Glass Nanoceramics: Luminescence and Optical Absorption Properties Open

M. Buryi, Yauhen Tratsiak, Ekateryna Trusova, Vladimír Babin, Juraj Páterek , et al. · 2023

Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells Open

M. Buryi, Tomáš Hubáček, František Hájek, Vítězslav Jarý, Vladimír Babin , et al. · 2022

The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may co…

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers Open

A. Hospodková, Jakub Čı́žek, František Hájek, Tomáš Hubáček, J. Pangrác , et al. · 2022

A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VE…

Optical properties of epitaxially grown GaN:Ge thin films Open

M. Buryi, Vladimír Babin, Tomáš Hubáček, Vítězslav Jarý, František Hájek , et al. · 2022

To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted. This study includes the measurements of radiolumin…

Untangling the controversy on Ce3+ luminescence in LaAlO3 crystals Open

Jan Pejchal, Vladimír Babin, M. Buryi, V. V. Laguta, František Hájek , et al. · 2022

The photoluminescence of a Ce-doped LaAlO 3 single crystal is not related to the material itself, but to Al-rich micro-inclusions, which is demonstrated by matching their cathodoluminescence spectrum with the photoluminescence spectrum of …

Scintillation Response Enhancement in Nanocrystalline Lead Halide Perovskite Thin Films on Scintillating Wafers Open

Kateřina Děcká, Jan Král, František Hájek, Petr Průša, Vladimír Babin , et al. · 2021

Lead halide perovskite nanocrystals of the formula CsPbBr3 have recently been identified as potential time taggers in scintillating heterostructures for time-of-flight positron emission tomography (TOF-PET) imaging thanks to their ultrafas…

General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design Open

Eduard HULICIUS, František Hájek, Alice HOSPODKOVÁ, Pavel HUBÍK, Zuzana Gedeonová , et al. · 2021

GaN-based nanostructures are used for many present semiconductor devices.The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and d…

Improvement of GaN crystalline quality by SiNx layer grown by MOVPE Open

A. Hospodková, Markéta Zíková, Tomáš Hubáček, J. Pangrác, K. Kuldová , et al. · 2020

In this work the mechanism which helps to reduce the dislocation density by deposition of a SiN x interlayer is discussed. It is shown that the dislocation reduction by SiN x interlayer deposition is influenced by dislocation density in th…

Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE Open

Tomáš Vaněk, Tomáš Hubáček, František Hájek, Filip Dominec, J. Pangrác , et al. · 2020

Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence.We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent G…

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