Franziska C. Beyer
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View article: Investigation of defects in 3C-SiC using deep level transient spectroscopy
Investigation of defects in 3C-SiC using deep level transient spectroscopy Open
In this work, epilayers of n -3C-SiC on Si were investigated using deep level transient spectroscopy (DLTS). The layer structure allowed the investigation of electrically active defects in the n type region of 3C-SiC. By comparison with th…
View article: Simultaneous charge carrier density mapping of SiC epilayers and substrates with terahertz time-domain spectroscopy
Simultaneous charge carrier density mapping of SiC epilayers and substrates with terahertz time-domain spectroscopy Open
With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a co…
View article: Simultaneous Charge Carrier Density Mapping of SiC Epilayers and Substrates with Terahertz Time-Domain Spectroscopy
Simultaneous Charge Carrier Density Mapping of SiC Epilayers and Substrates with Terahertz Time-Domain Spectroscopy Open
With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a co…
View article: On the way to more sustainability: Development of five Al0.25Ga0.75N atomic layer etching modes for shorter cycle times
On the way to more sustainability: Development of five Al0.25Ga0.75N atomic layer etching modes for shorter cycle times Open
With a view to greater sustainability in the manufacturing process of semiconductor components, a modification of the atomic layer etching (ALE) process was successfully carried out on AlGaN material. Therefore, five different ALE modes, s…
View article: Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers
Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers Open
A comprehensive investigation on the uniformity of offcut angles on vicinal GaN substrate surfaces and their impact on both epitaxial growth and electrical characteristics of AlGaN/GaN heteroepitaxial structures is presented. A nearly inve…
View article: Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy
Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy Open
Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time…
View article: Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching Open
An atomic layer etching (ALE) process without purge has been developed for gate recess etching of AlGaN/GaN high electron mobility transistors (HEMTs). The process consists of repeating ALE cycles where Cl2/BCl3 plasma modifies the surface…
View article: Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy
Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy Open
Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time…
View article: Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors
Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors Open
This paper investigates the gas flow and the mass transport in simplified axial-symmetric vertical HVPE reactors for the growth of GaN bulk crystals through numerical simulations. We evaluate the relative significance of different flow and…
View article: Current Status of Carbon‐Related Defect Luminescence in GaN
Current Status of Carbon‐Related Defect Luminescence in GaN Open
Highly insulating layers are a prerequisite for gallium nitride (GaN)‐based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact on the optical and electrical properties …
View article: A carbon-doping related luminescence band in GaN revealed by below bandgap excitation
A carbon-doping related luminescence band in GaN revealed by below bandgap excitation Open
Carbon doped GaN grown by hydride vapor phase epitaxy was investigated by photoluminescence and photoluminescence excitation spectroscopy covering a broad range of carbon concentrations. Above bandgap excitation reveals typical transitions…
View article: Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Growth and Properties of Intentionally Carbon‐Doped GaN Layers Open
Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × …