Fuwei Zhuge
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View article: Tailoring lithium intercalation pathway in <scp>2D</scp> van der Waals heterostructure for high‐speed edge‐contacted floating‐gate transistor and artificial synapses
Tailoring lithium intercalation pathway in <span>2D</span> van der Waals heterostructure for high‐speed edge‐contacted floating‐gate transistor and artificial synapses Open
Local phase transition in transition metal dichalcogenides (TMDCs) by lithium intercalation enables the fabrication of high‐quality contact interfaces in two‐dimensional (2D) electronic devices. However, controlling the intercalation of li…
View article: Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts
Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts Open
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to millis…
View article: Simultaneously Ultrafast and Super-Robust Two-dimensional Flash Memory Enabled by Phase Engineered Edge Contact
Simultaneously Ultrafast and Super-Robust Two-dimensional Flash Memory Enabled by Phase Engineered Edge Contact Open
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the dilemma of ‘speed-retention-endurance’, their typical operation speed is limited ~microseconds…
View article: Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design
Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design Open
Physical vapor deposition (PVD) methods have been widely employed for high‐quality crystal growth and thin‐film deposition in semiconductor electronics. However, the fabrication of emerging low dimensional nanostructures is hitherto challe…
View article: Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase engineered edge contacts
Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase engineered edge contacts Open
Source Data for figure 1-4 in main manuscript.
View article: <b>Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase engineered edge contacts</b>
<b>Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase engineered edge contacts</b> Open
source data for "Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase engineered edge contacts" published at Nature Communications.
View article: <scp>Vapor‐Phase Precise‐Synthesis</scp> of <scp>2D</scp> Inorganic Materials for Optoelectronics
<span>Vapor‐Phase Precise‐Synthesis</span> of <span>2D</span> Inorganic Materials for Optoelectronics Open
Comprehensive Summary 2D materials have attracted intensive attention due to their unique electrical and optical properties associated with their strictly defined low dimensionalities. They provide a wide range of basic building blocks for…
View article: Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors with a van der Waals interface
Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors with a van der Waals interface Open
Silicon semiconductor technology is approaching its downscaling limit in state-of-the-art electronics. Atomically thin two-dimensional (2D) semiconductors allow exceptional gate electrostatics in field-effect transistors (FETs), thus holdi…
View article: Wafer-scale van der Waals Dielectrics of Inorganic Molecular Crystals
Wafer-scale van der Waals Dielectrics of Inorganic Molecular Crystals Open
Van der Waals (vdW) dielectrics such as hBN are widely used to preserve the intrinsic properties of two-dimensional (2D) semiconductors and support the fabrication of high-performance 2D devices. This is fundamentally attributed to their d…
View article: Emerging Artificial Two-Dimensional van der Waals Heterostructures for Optoelectronics
Emerging Artificial Two-Dimensional van der Waals Heterostructures for Optoelectronics Open
Two-dimensional (2D) materials are attracting explosive attention for their intriguing potential in versatile applications, covering optoelectronics, electronics, sensors, etc. An attractive merit of 2D materials is their viable van der Wa…
View article: Graphene–ferroelectric transistors as complementary synapses for supervised learning in spiking neural network
Graphene–ferroelectric transistors as complementary synapses for supervised learning in spiking neural network Open
The hardware design of supervised learning (SL) in spiking neural network (SNN) prefers 3-terminal memristive synapses, where the third terminal is used to impose supervise signals. In this work we address this demand by fabricating graphe…
View article: Modulation of the Anisotropic Electronic Properties in ReS <sub>2</sub> via Ferroelectric Film
Modulation of the Anisotropic Electronic Properties in ReS <sub>2</sub> via Ferroelectric Film Open
Open AccessCCS ChemistryRESEARCH ARTICLE1 Aug 2019Modulation of the Anisotropic Electronic Properties in ReS2 via Ferroelectric Film Renyan Wang†, Fengya Zhou†, Liang Lv, Shasha Zhou, Yiwei Yu, Fuwei Zhuge, Huiqiao Li, Lin Gan and Tianyou …
View article: Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization Open
View article: An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure
An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure Open
ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consistin…
View article: All-nanocellulose nonvolatile resistive memory
All-nanocellulose nonvolatile resistive memory Open
Single-use disposable nonvolatile memory devices hold promise for novel applications in internet of everything (IoE) technology by storing the health status of individual humans in daily life. However, conventional memory devices are not d…
View article: Three-dimensional Nanowire Structures for Ultra-Fast Separation of DNA, Protein and RNA Molecules
Three-dimensional Nanowire Structures for Ultra-Fast Separation of DNA, Protein and RNA Molecules Open