Greta Andrini
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View article: Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing Open
We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( V Si − ) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm − 2 energy density range. The la…
View article: Effects of Thermal Oxidation and Proton Irradiation on Optically Detected Magnetic Resonance Sensitivity in Sub-100 nm Nanodiamonds
Effects of Thermal Oxidation and Proton Irradiation on Optically Detected Magnetic Resonance Sensitivity in Sub-100 nm Nanodiamonds Open
In recent decades, nanodiamonds (NDs) have emerged as innovative nanotools for weak magnetic fields and small temperature variation sensing, especially in biological systems. At the basis of the use of NDs as quantum sensors are nitrogen-v…
View article: Single-Photon Detectors for Quantum Integrated Photonics
Single-Photon Detectors for Quantum Integrated Photonics Open
Single-photon detectors have gained significant attention recently, driven by advancements in quantum information technology. Applications such as quantum key distribution, quantum cryptography, and quantum computation demand the ability t…
View article: Efficient Fabrication of High‐Density Ensembles of Color Centers via Ion Implantation on a Hot Diamond Substrate
Efficient Fabrication of High‐Density Ensembles of Color Centers via Ion Implantation on a Hot Diamond Substrate Open
Nitrogen‐vacancy (NV) centers in diamonds are one of the most promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on th…
View article: Integrated Photonic Passive Building Blocks on Silicon-on-Insulator Platform
Integrated Photonic Passive Building Blocks on Silicon-on-Insulator Platform Open
Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communicat…
View article: Hybrid Integrated Silicon Photonics Based on Nanomaterials
Hybrid Integrated Silicon Photonics Based on Nanomaterials Open
Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical and quantum information technologies, since their ability to seamlessly integrate photonic components withi…
View article: Solid-State Color Centers for Single-Photon Generation
Solid-State Color Centers for Single-Photon Generation Open
Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the developm…
View article: Simulation and first characterization of MAPS test structures with gain for timing applications
Simulation and first characterization of MAPS test structures with gain for timing applications Open
Thanks to their advantages in terms of easiness of manufacturing and reduced production costs, Monolithic Active Pixel Sensors (MAPS) represent an appealing solution for radiation imaging applications, which require to cover large areas wi…
View article: Quantum Information with Integrated Photonics
Quantum Information with Integrated Photonics Open
Since the 1980s, researchers have taken giant steps in understanding how to use quantum mechanics for solving real problems—for example, making a computer that works according to the laws of quantum mechanics. In recent decades, researcher…
View article: Efficiency Optimization of Ge‐V Quantum Emitters in Single‐Crystal Diamond upon Ion Implantation and HPHT Annealing
Efficiency Optimization of Ge‐V Quantum Emitters in Single‐Crystal Diamond upon Ion Implantation and HPHT Annealing Open
The authors report on the characterization at the single‐defect level of germanium‐vacancy (GeV) centers in diamond produced upon Ge − ion implantation and different subsequent annealing processes, with a specific focus on the effect of hi…
View article: Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing Open
The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conve…
View article: Magnesium-Vacancy Optical Centers in Diamond
Magnesium-Vacancy Optical Centers in Diamond Open
We provide the first systematic characterization of the structural and photoluminescence properties of optically active centers fabricated upon implantation of 30-100 keV Mg+ ions in synthetic diamond. The structural configurations of Mg-r…