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View article: Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration Open
The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germani…
View article: Ion beam enhanced diffusion of B during Si molecular beam epitaxy
Ion beam enhanced diffusion of B during Si molecular beam epitaxy Open
Enhanced diffusion of B is observed during the growth of ion bombarded epitaxial layers by Si molecular beam epitaxy. Ion-assisted methods are generally required for high levels of n-type doping, and we find that the damage caused by the l…
View article: RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE
RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE Open
We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interfa…
View article: Boron, phosphorus, and arsenic diffusion in TiSi2
Boron, phosphorus, and arsenic diffusion in TiSi2 Open
The diffusivities of B, P, and As implanted in TiSi2 are analyzed between 500 and 900 °C by secondary ion mass spectroscopy. It is shown that P and As have high (and almost equal) diffusivities compared with B which appears immobile. This …