Giang T. Dang
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View article: Method to Estimate Dislocation Densities from Images of <b>α</b>‐Ga<sub>2</sub>O<sub>3</sub>‐Based Corundum Oxides Using the Computer Vision YOLO Algorithm
Method to Estimate Dislocation Densities from Images of <b>α</b>‐Ga<sub>2</sub>O<sub>3</sub>‐Based Corundum Oxides Using the Computer Vision YOLO Algorithm Open
This work applies the computer vision “You only look once” (YOLO) algorithm to extract bounding boxes around dislocations in weak‐beam dark‐field transmission electron microscopy (WBDF TEM) images of semiconductor thin films. A formula is …
View article: Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition
Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition Open
α-Ga2O3 films were grown on a c-plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-Ga2O3 film quality was investigated. The growth rate monotonically…
View article: The effects of oxygen flow ratio on the properties of Ag <sub> <i>x</i> </sub> O thin films grown by radio frequency magnetron sputtering
The effects of oxygen flow ratio on the properties of Ag <sub> <i>x</i> </sub> O thin films grown by radio frequency magnetron sputtering Open
When silver oxide was deposited using sputtering, its color changed depending on the oxygen supplied amount. How would the oxygen flow ratio affect the properties of Ag x O thin films prepared by radio frequency magnetron sputtering?
View article: Analysis of dislocation defects in compositionally step-graded α-(Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> ) <sub>2</sub> O <sub>3</sub> layers
Analysis of dislocation defects in compositionally step-graded α-(Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> ) <sub>2</sub> O <sub>3</sub> layers Open
The dislocations in α-(Al x Ga 1− x ) 2 O 3 layers were bent by the strain caused by the composition change, resulting in a decrease in the number of dislocations.
View article: Growth mechanism under the supply-limited regime in mist chemical vapor deposition: presumption of mist droplet state in high-temperature field
Growth mechanism under the supply-limited regime in mist chemical vapor deposition: presumption of mist droplet state in high-temperature field Open
In mist CVD, investigation of the dependence of the growth rate on the solution concentration and precursor supply amount in the growth of ZnO films using a methanol-based solution of Zn(acac) 2 revealed that the reaction is a rate-determi…
View article: The Effects of Oxygen Flow Ratio on the Properties of Agxothin Films Grown by Radio Frequency Magnetron-Sputtering
The Effects of Oxygen Flow Ratio on the Properties of Agxothin Films Grown by Radio Frequency Magnetron-Sputtering Open
View article: The Effects of Oxygen Flow Ratio on the Properties of Agxo Thin Films Grown by Radio Frequency Magnetron-Sputtering
The Effects of Oxygen Flow Ratio on the Properties of Agxo Thin Films Grown by Radio Frequency Magnetron-Sputtering Open
View article: Epitaxial Growth of Zn1- X Mg X O/Agxo Heterojunction Diodes by Mist Cvd at Atmospheric Pressure
Epitaxial Growth of Zn1- X Mg X O/Agxo Heterojunction Diodes by Mist Cvd at Atmospheric Pressure Open
View article: The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition Open
α-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray ph…
View article: Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV
Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV Open
This study systematically investigates the properties of (i) conductive Si-doped α-(AlxGa1−x)2O3 thin films grown via a third generation mist chemical vapor deposition system and (ii) Schottky diodes (SDs) and metal semiconductor field-eff…
View article: α -(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition
α -(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition Open
A third generation mist chemical vapor deposition (3rd G mist CVD) system was used to grow six single-layer and two heterostructure α-(AlxGa1−x)2O3 buffers on c-plane sapphire substrates for the subsequent deposition of conductive Sn-doped…