Geert Morthier
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View article: Electro‐Thermally Driven Vanadium Dioxide Based Guided Wave THz Modulator
Electro‐Thermally Driven Vanadium Dioxide Based Guided Wave THz Modulator Open
To meet the growing demand for integrated, broadband, on‐chip, external THz modulation, a CMOS‐compatible THz modulator operating in the 0.5–0.6 THz frequency range is proposed. To the best of the author's knowledge, this is the first repo…
View article: Enhanced feedback sensitivity suppression in phase-detuned tunable lasers with high-Q Vernier-effect based ring resonators
Enhanced feedback sensitivity suppression in phase-detuned tunable lasers with high-Q Vernier-effect based ring resonators Open
The feedback sensitivity of a tunable laser with a highly wavelength-selective reflector using a high-Q Vernier-effect based ring resonator structure is examined through both experimental and simulation work. The study demonstrates that by…
View article: Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon
Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon Open
The static and dynamic characteristics of electrically injected monolithic nano-ridge lasers emitting around the wavelength of 1030 nm are comprehensively investigated, providing critical insights into their performance and identifying pat…
View article: Widely tunable narrow-linewidth lasers with booster amplification on silicon photonics
Widely tunable narrow-linewidth lasers with booster amplification on silicon photonics Open
Achieving high-power, narrow-linewidth, and low-intensity-noise (RIN) widely tunable lasers on silicon photonics (SiPh) platforms remains a critical challenge for transformative photonic applications. In this work, we present the micro-tra…
View article: Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon
Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon Open
We present a semi-analytical model that can accurately explain the working principle behind the recently reported electrically injected In 0.2 Ga 0.8 As/GaAs monolithic nano-ridge lasers and more importantly show how the model can be used …
View article: Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs based photodetector array
Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs based photodetector array Open
We propose an integrated back-illuminated InP/InGaAs p-i-n photodetector array (PDA) with high responsivity and external quantum efficiency. The photodetector array was characterized and packaged for small-signal response and transmission …
View article: Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs based photodetector array
Multi-channel RF-optical receiver enabled by a high performance p-i-n InP-InGaAs based photodetector array Open
We propose an integrated back-illuminated InP/InGaAs p-i-n photodetector array (PDA) with high responsivity and external quantum efficiency. The photodetector array was characterized and packaged for small-signal response and transmission …
View article: Present and future of micro-transfer printing for heterogeneous photonic integrated circuits
Present and future of micro-transfer printing for heterogeneous photonic integrated circuits Open
We present the current state of the art in micro-transfer printing for heterogeneously integrated silicon photonic integrated circuits. The versatility of the technology is highlighted, as is the way ahead to make this technology a key ena…
View article: Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters
Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters Open
We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP c…
View article: Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter
Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter Open
We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (μTP). After the introduction of the μTP c…
View article: Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter
Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter Open
We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (μTP). After the introduction of the μTP c…
View article: High-performance grating couplers on 220-nm thick silicon by inverse design for perfectly vertical coupling
High-performance grating couplers on 220-nm thick silicon by inverse design for perfectly vertical coupling Open
View article: GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Open
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world [1,2,3,4,5,6]. However, the lack of highly scalable, native CMOS-integrated light sources is one of th…
View article: GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Open
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
View article: Numerical Study of the Single Mode Stability of Quantum Well and Quantum Dot DFB Laser Diodes Under External Optical Feedback
Numerical Study of the Single Mode Stability of Quantum Well and Quantum Dot DFB Laser Diodes Under External Optical Feedback Open
We numerically analysed the single mode stability of of multi quantum well and quantum dot DFB laser diodes in the presence of external optical feedback. Laser diodes which operate in a stable single mode in the absence of feedback were fo…
View article: III-V-on-Si DFB Laser With Co-Integrated Power Amplifier Realized Using Micro-Transfer Printing
III-V-on-Si DFB Laser With Co-Integrated Power Amplifier Realized Using Micro-Transfer Printing Open
A C-band III-V-on-Si distributed feedback (DFB) laser with co-integrated power amplifier was realized using micro-transfer printing. The DFB laser exhibits single mode operation around 1540 nm at 20 degrees C. By driving the DFB laser and …
View article: High-performance grating couplers by inverse design for perfectly vertical coupling
High-performance grating couplers by inverse design for perfectly vertical coupling Open
In the application of free-space optical (FSO) communication, grating couplers (GCs) are the key components, enabling the coupling of the vertically incident optical beam to optical waveguides. This paper presents the design and experiment…
View article: High-performance grating couplers by inverse design for perfectly vertical coupling
High-performance grating couplers by inverse design for perfectly vertical coupling Open
In the application of free-space optical (FSO) communication, grating couplers (GCs) are the key components, enabling the coupling of the vertically incident optical beam to optical waveguides. This paper presents the design and experiment…
View article: Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits
Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits Open
Silicon photonics (SiPh) is a disruptive technology in the field of integrated photonics and has experienced rapid development over the past two decades. Various high-performance Si and Ge/Si-based components have been developed on this pl…
View article: High wall-plug efficiency and narrow linewidth III-V-on-silicon C-band DFB laser diodes
High wall-plug efficiency and narrow linewidth III-V-on-silicon C-band DFB laser diodes Open
We present recent results on compact and power efficient C-band distributed feedback lasers through adhesive bonding of a III-V die onto a silicon-on-insulator circuit. A wall-plug efficiency up to 16% is achieved for bias currents below 4…
View article: High-efficiency short-cavity III-V-on-Si C-band DFB laser diodes
High-efficiency short-cavity III-V-on-Si C-band DFB laser diodes Open
In this paper, we demonstrate a high-efficiency, short-cavity heterogeneously integrated C-band DFB laser on a Si waveguide realized using adhesive bonding. First, simulation results regarding the integrated cavity design are discussed. In…
View article: Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision
Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision Open
InP DFB lasers are flip-chip bonded to 300 mm Si photonic wafers using a pick-and-place tool with an advanced vision system, realizing high-precision and high-throughput passive assembly. By careful co-design of the InP-Si Photonics electr…
View article: Influence of optical amplifiers for on-chip homodyne laser Doppler vibrometers
Influence of optical amplifiers for on-chip homodyne laser Doppler vibrometers Open
Photonic integration allows for the development of compact and relatively cheap laser Doppler vibrometers (LDVs). Optical amplification could enhance the performance of these on-chip LDVs, but the intrinsic noise of optical amplifiers coul…
View article: Feedback Sensitivity of DBR-Type Laser Diodes
Feedback Sensitivity of DBR-Type Laser Diodes Open
It is shown theoretically that the feedback sensitivity of Distributed Bragg Reflector laser diodes with low-loss Bragg section decreases with the length of the Bragg section and also can be decreased by detuning from the Bragg peak. The e…
View article: Micro-Transfer-Printing for III-V/Si PICs
Micro-Transfer-Printing for III-V/Si PICs Open
Micro-transfer-printing ( µ TP) enables the intimate integration of a variety of III-V opto-electronic components on silicon photonic integrated circuits (Si PICs). It allows for the scalable manufacturing of complex III-V/Si PICs at low c…
View article: III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
III-V-on-Si photonic integrated circuits realized using micro-transfer-printing Open
Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and po…
View article: Polymer-Based Microring Resonator with the Multimode Interference Coupler Operating at Very-Near-Infrared Wavelengths
Polymer-Based Microring Resonator with the Multimode Interference Coupler Operating at Very-Near-Infrared Wavelengths Open
A microring resonator with the multimode interference coupler is fabricated on the polymer platform by using UV-based soft nanoimprint technique. A unique class of fluorinated polymer, perfluoropolyether (PFPE), is employed for the fabrica…
View article: Demonstration of 80 Gbps NRZ-OOK Electro-Absorption Modulation of InP-on-Si DFB Laser Diodes
Demonstration of 80 Gbps NRZ-OOK Electro-Absorption Modulation of InP-on-Si DFB Laser Diodes Open
High-speed electro-absorption modulation of a heterogeneously integrated InP-on-Si DFB laser diode is used for the transmission of an 80 Gbps NRZ-OOK signal over 2 km of NZ-DSF link below the hard-decision forward-error-correction threshol…
View article: 80-Gbps NRZ-OOK Electro-Absorption Modulation of InP-on-Si DFB Laser Diodes
80-Gbps NRZ-OOK Electro-Absorption Modulation of InP-on-Si DFB Laser Diodes Open
High-speed electro-absorption modulation of a heterogeneously integrated InP-on-Si DFB laser diode is demonstrated. The device has a 3-dB modulation bandwidth of 33 GHz and is used for the transmission of an 80-Gbps non-return-to-zero on-o…
View article: Bimodal Waveguide Interferometer RI Sensor Fabricated on Low-Cost Polymer Platform
Bimodal Waveguide Interferometer RI Sensor Fabricated on Low-Cost Polymer Platform Open
A refractive index sensor based on bimodal waveguide interferometer is demonstrated on the low-cost polymer platform for the first time. Different from conventional interferometers which make use of the interference between the light from …