Genichi Motomura
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View article: Pure Green Ag–In–Ga–S/Ga–S Quantum Dot Light‐Emitting Diodes with Electron Transport Materials Exhibiting Enhanced Luminescence Properties
Pure Green Ag–In–Ga–S/Ga–S Quantum Dot Light‐Emitting Diodes with Electron Transport Materials Exhibiting Enhanced Luminescence Properties Open
Quantum dots (QDs) are essential luminescent materials with applications in wide‐color‐gamut displays requiring exceptional color reproducibility. Multinary semiconductor QDs composed of groups I, III and VI elements are expected to serve …
View article: Development of Pure Color Light-Emitting Diodes Using Multinary Semiconductor Quantum Dots
Development of Pure Color Light-Emitting Diodes Using Multinary Semiconductor Quantum Dots Open
広色域ディスプレイの実現を目指し,高色純度な発光が得られる量子ドットを用いた発光素子を開発した.硫化銀インジウムなどに代表される多元系半導体からなる量子ドット材料の高色純度化と発光波長制御に取り組み,バンド端遷移による高色純度の発光を示す量子ドット材料を得た.合成した各色の多元系半導体量子ドットを使った量子ドットEL(Electroluminescence)素子を試作し,その発光特性を評価・分析することで,色鮮やかなEL発光を実現するための素子構造など条件を見いだした.各色…
View article: One-pot synthesis of Ag–In–Ga–S nanocrystals embedded in a Ga<sub>2</sub>O<sub>3</sub> matrix and enhancement of band-edge emission by Na<sup>+</sup> doping
One-pot synthesis of Ag–In–Ga–S nanocrystals embedded in a Ga<sub>2</sub>O<sub>3</sub> matrix and enhancement of band-edge emission by Na<sup>+</sup> doping Open
Ag–In–Ga–S nanocrystals embedded in a Ga 2 O 3 matrix produced a narrow band-edge photoluminescence, the intensity being significantly enlarged by Na + doping, and they effectively served as an emitting layer in green quantum dot-light-emi…
View article: [Paper] Green Electroluminescence Generated by Band-edge Transition in Ag-In-Ga-S/GaS<sub><i>x</i></sub> Core/shell Quantum Dots
[Paper] Green Electroluminescence Generated by Band-edge Transition in Ag-In-Ga-S/GaS<sub><i>x</i></sub> Core/shell Quantum Dots Open
Quantum-dot light-emitting diodes (QD-LEDs) that exhibit green emission were fabricated using Ag-In-Ga-S/GaSx (AIGS) core/shell QDs as low-toxicity QDs. Although multi-element QDs such as AIGS are prone to broad-wavelength defect-induced e…
View article: Improvement of electroluminescent characteristics in quantum dot light-emitting diodes using ZnInP/ZnSe/ZnS quantum dots by mixing an electron transport material into the light-emitting layer
Improvement of electroluminescent characteristics in quantum dot light-emitting diodes using ZnInP/ZnSe/ZnS quantum dots by mixing an electron transport material into the light-emitting layer Open
Quantum dots (QDs) are expected to be applied to emitting materials used in wide-color-gamut displays. However, the development of low-toxic alternatives is necessary because QDs that exhibit high color purity and highly efficient emission…
View article: Quantum dot light-emitting diode using 2,2′-bis(N-carbazolyl)-9,9′-spirobifluorene as a morphologically and thermally stable hole-transporting material
Quantum dot light-emitting diode using 2,2′-bis(N-carbazolyl)-9,9′-spirobifluorene as a morphologically and thermally stable hole-transporting material Open
We investigated the morphology of vacuum-deposited films of hole-transporting materials 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) and 2,2′-bis(N-carbazolyl)-9,9′-spirobifluorene (CFL) on a colloidal quantum dot (QD) film by atomic force m…
View article: [Paper] A Flexible Display Driven by Oxide-Thin-Film Transistors and Using Inverted Organic Light-Emitting Diodes
[Paper] A Flexible Display Driven by Oxide-Thin-Film Transistors and Using Inverted Organic Light-Emitting Diodes Open
An 8-inch oxide-TFT-driven flexible display using inverted organic light-emitting diodes (iOLEDs) with an inverted device structure was demonstrated. We employed iOLEDs with an air-stable electron injection layer and longer lifetime. An ox…