Geoffrey Avit
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View article: Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy Open
Scanning spreading resistance microscopy (SSRM) measurements were performed on GaAs thick films grown by hydride vapor phase epitaxy technology under different growth conditions to evaluate their carrier concentrations. For this purpose, a…
View article: Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE Open
Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of …
View article: Long indium-rich InGaAs nanowires by SAG-HVPE
Long indium-rich InGaAs nanowires by SAG-HVPE Open
We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μ m h −1 and high aspect ratio NWs were obtained. Composition along t…
View article: Formation of voids in selective area growth of InN nanorods in SiN<sub>x</sub> on GaN templates
Formation of voids in selective area growth of InN nanorods in SiN<sub>x</sub> on GaN templates Open
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View article: Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy Open
International audience