Georg Mueller
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View article: Auxiliary Power Supply for a Semiconductor-based Marx Generator
Auxiliary Power Supply for a Semiconductor-based Marx Generator Open
An auxiliary power supply for stages of a semiconductor-based Marx generator has been designed and tested. The auxiliary power supply converts the Marx generator's stage voltage ranging from 50 V to 1000 V to stabilized voltages of 7 V and…
View article: Turbulent flow of liquid lead alloy in oxygen-controlled corrosion erosion test facility
Turbulent flow of liquid lead alloy in oxygen-controlled corrosion erosion test facility Open
The CORELLA (CORrosion Erosion test facility for Liquid Lead Alloy) facility allows corrosion erosion tests in molten lead alloys at controlled oxygen content and temperature under flowing conditions. Its exposure chamber consists of a cyl…
View article: Fast sic-mosfet switch with gate boosting technology
Fast sic-mosfet switch with gate boosting technology Open
Gate boosting enables a considerable increase in switching speed for commercially available MOSFETs. In the present work, a switch comprising three SiC-MOSFETs in parallel configuration has been combined with a gate drive circuit employing…
View article: Evolution of Volatile and Phenolic Compounds during Bottle Storage of Merlot Wines Vinified Using Pulsed Electric Fields-Treated Grapes
Evolution of Volatile and Phenolic Compounds during Bottle Storage of Merlot Wines Vinified Using Pulsed Electric Fields-Treated Grapes Open
This study aimed to elucidate changes in volatile, phenolic, and oenological profiles of wines vinified from Pulsed Electric Fields (PEF)-treated and untreated Merlot grapes during bottle storage of up to 150, 90, and 56 days at 4 °C, 25 °…
View article: A Fast Modular Semiconductor-Based Marx Generator for Driving Dynamic Loads
A Fast Modular Semiconductor-Based Marx Generator for Driving Dynamic Loads Open
The challenging demands of pulsed electron beam devices (such as the GESA device) with respect to their pulsed power supply have led to the development of a new semiconductor-based Marx generator. At a maximum output voltage of 120 kV and …
View article: Design Validation of a Single Semiconductor-Based Marx-Generator Stage for Fast Step-Wise Arbitrary Output Waveforms
Design Validation of a Single Semiconductor-Based Marx-Generator Stage for Fast Step-Wise Arbitrary Output Waveforms Open
A new modular pulsed-power source with fast rise time and step-wise arbitrary output waveform generation is currently under development to drive the Gepulste Elektronenstrahlanlage device investigated at the Institute for Pulsed Power and …
View article: A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit
A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit Open
For semiconductor-based pulsed power generators, short turn-ON and turn-OFF times of the employed switching elements are especially in hard switching condition of advantage. In order to enhance switching speeds for standard devices under h…
View article: Analyzing a gate-boosting circuit for fast switching
Analyzing a gate-boosting circuit for fast switching Open
A challenge in fast switching of voltage-controlled power semiconductor devices such as MOSFETs and IGBTs is fast charging of the gate capacitance. As gate drive circuit and device leads both involve stray inductance, the rise rate of the …
View article: Simple gate-boosting circuit for reduced switching losses in single IGBT devices
Simple gate-boosting circuit for reduced switching losses in single IGBT devices Open
Rise and fall time of current and voltage across an IGBT determine the switching losses under hard switching conditions. Due to parasitic inductances in the gate drive circuit and the device leads, gate charging is delayed and hence switch…