Gerald Hönig
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View article: Suppression of the quantum-confined Stark effect in polar nitride heterostructures
Suppression of the quantum-confined Stark effect in polar nitride heterostructures Open
Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppr…
View article: Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design Open
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconducto…
View article: Shielding Electrostatic Fields in Polar Semiconductor Nanostructures
Shielding Electrostatic Fields in Polar Semiconductor Nanostructures Open
Modern opto-electronic devices are based on semiconductor heterostructures\nemploying the process of electron-hole pair annihilation. In particular polar\nmaterials enable a variety of classic and even quantum light sources, whose\non-goin…