Golnaz Karbasian
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View article: Fabrication of Metallic Single Electron Transistors Featuring Plasma Enhanced Atomic Layer Deposition of Tunnel Barriers
Fabrication of Metallic Single Electron Transistors Featuring Plasma Enhanced Atomic Layer Deposition of Tunnel Barriers Open
The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performanc…
View article: Chemical Mechanical Polishing of Gold
Chemical Mechanical Polishing of Gold Open
This thesis presents a set of experiments dedicated to finding a reliable gold CMP process with satisfactory and reproducible results.
View article: Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2
Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2 Open
We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped …
View article: Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition Open
Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer depositi…
View article: Experimental Demonstration of Single Electron Transistors Featuring SiO2 PEALD in Ni-SiO2-Ni Tunnel Junctions
Experimental Demonstration of Single Electron Transistors Featuring SiO2 PEALD in Ni-SiO2-Ni Tunnel Junctions Open
We report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultra-thin (~1 nm) tunnel-transparent SiO2 in Ni-SiO2-Ni tunnel junctions. We show that as a result of the O2 pl…
View article: Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier Open
The fabrication is reported of nanodamascene metallic single electron transistors that take advantage of unique properties of chemical mechanical polishing and atomic layer deposition. Chemical mechanical polishing provides a path for tuni…