D. G. Austing
YOU?
Author Swipe
Bidirectional nuclear polarization through electric dipole spin resonance enabled by spin-orbit interaction in a single hole planar quantum dot device Open
Spin exchange between confined holes and nuclei has been demonstrated for zero-dimensional quantum dots by optical techniques but has not been observed for gated planar structures. Here, enabled by strong spin-orbit interaction, and under …
View article: Characterization of dot-specific and tunable effective <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> factors in a GaAs/AlGaAs double quantum dot single-hole device
Characterization of dot-specific and tunable effective factors in a GaAs/AlGaAs double quantum dot single-hole device Open
Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we o…
View article: Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well
Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well Open
The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. Here, we demonstrate the operation of a few-electron double q…
View article: Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs
Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs Open
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations i…
Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction Open
There is rapidly expanding interest in exploiting the spin of valence-band holes rather than conduction-band electrons for spin qubit semiconductor circuits composed of coupled quantum dots. The hole platform offers stronger spin–orbit int…
View article: Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs Open
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations i…
View article: Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot Open
Electrical tunability of the $$g$$ -factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This…
Phase diagram of quantum Hall breakdown and nonlinear phenomena for InGaAs/InP quantum wells Open
We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx) …
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure Open
We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fab…