H. Kettunen
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View article: Multiple Cell Upsets in the Configuration RAM of a 7-nm FinFET SoC Under Heavy Ions
Multiple Cell Upsets in the Configuration RAM of a 7-nm FinFET SoC Under Heavy Ions Open
This manuscript investigates the heavy ion effects on the novel 7-nm FinFET AMD (formerly, Xilinx) Versal SoC, namely on the configuration memory of the embedded FPGA. The experiment consisted in loading a program in a delidded device, irr…
View article: Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs
Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs Open
Three SDRAMs from the same manufacturer with technology node sizes 110, 72, and 63 nm, were investigated under proton irradiation and using scanning electron microscopy (SEM). The radiation-induced faults were characterized and compared be…
View article: Proton Direct Ionization in Sub-Micron Technologies: Test Methodologies and Modeling
Proton Direct Ionization in Sub-Micron Technologies: Test Methodologies and Modeling Open
Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were suggested from p…
View article: Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams
Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams Open
The radiation-induced emission (RIE) of Gd3+-doped sol–gel silica glass has been shown to have suitable properties for use in the dosimetry of beams of ionizing radiation in applications such as radiotherapy. Linear electron accelerators a…
View article: Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs Open
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and\nhigh-energy accelerator applications. However, the current commercial technologies are still susceptible to\nSingle Event Effect…
View article: Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams
Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams Open
Radiation-induced emission of doped sol-gel silica glass samples was investigated under a pulsed 20-MeV electron beam. The studied samples were drawn rods doped with cerium, copper, or gadolinium ions, which were connected to multimode pur…
View article: Optical Fiber Based Dosimeter Data From RADEF Pulsed Electron Beams - Oscilloscope Traces
Optical Fiber Based Dosimeter Data From RADEF Pulsed Electron Beams - Oscilloscope Traces Open
These data are from tests of fiber optic based dosimetry systems. The purpose of the collected data is to use it for characterizing the different tested samples responses against pulsed electron radiation, for different electron bunch size…
View article: Improved stability of black silicon detectors using aluminum oxide surface passivation
Improved stability of black silicon detectors using aluminum oxide surface passivation Open
We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 ˚C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, t…
View article: Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment Open
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes…
View article: Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation
Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation Open
Functional verification schemes at a level different from component-level testing are emerging as a cost-effective tool for those space systems for which the risk associated with a lower level of assurance can be accepted. Despite the prom…
View article: Aalto-1, multi-payload CubeSat: Design, integration and launch
Aalto-1, multi-payload CubeSat: Design, integration and launch Open
View article: Effect of electron beam radiation on the mechanical and thermomechanical properties of proton exchange membranes
Effect of electron beam radiation on the mechanical and thermomechanical properties of proton exchange membranes Open
Anna A. Oleshkevich, Specific features of change in enzymate activity in
View article: Irradiation of the head reduces adult hippocampal neurogenesis and impairs spatial memory, but leaves overall health intact in rats
Irradiation of the head reduces adult hippocampal neurogenesis and impairs spatial memory, but leaves overall health intact in rats Open
Treatment of brain cancer, glioma, can cause cognitive impairment as a side‐effect, possibly because it disrupts the integrity of the hippocampus, a structure vital for normal memory. Radiotherapy is commonly used to treat glioma, but the …
View article: SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below
SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below Open
The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low-and high-energy protons, heavy ions, thermal, intermed…
View article: Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation Open
View article: Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate
Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate Open
We investigate, through measurements and simulations, the possible direct ionization impact on the accelerator soft-error rate (SER), not considered in standard qualification approaches. Results show that, for a broad variety of state-of-t…
View article: Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash
Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash Open
The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.
View article: Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam
Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam Open
Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck bits in the me…
View article: Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs
Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs Open
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly u…
View article: Feasibility of capillary electrophoresis as an on-line method for monitoring residual collector concentrations at a flotation plant
Feasibility of capillary electrophoresis as an on-line method for monitoring residual collector concentrations at a flotation plant Open
The aim of this Master’s thesis was to evaluate the technical feasibility of a capillary electrophoresis (CE) method as an on-line or an at-site instrument providing information of concentrations of sodium isopropyl xanthate (SIPX), sodium…
View article: Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells Open
Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floati…
View article: Energy loss and straggling of MeV Si ions in gases
Energy loss and straggling of MeV Si ions in gases Open