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View article: Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials
Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials Open
Judiciously designed\ntwo-dimensional THz metamaterials consisting\nof resonant metallic structures embedded in a dielectric environment\nlocally enhance the electromagnetic field of an incident THz pulse\nto values sufficiently high to ca…
View article: Investigation of lasing in highly strained germanium at the crossover to direct band gap
Investigation of lasing in highly strained germanium at the crossover to direct band gap Open
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if th…
View article: Investigation of lasing in highly strained germanium at the crossover to direct band gap
Investigation of lasing in highly strained germanium at the crossover to direct band gap Open
Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
View article: Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials
Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials Open
Judiciously designed two-dimensional THz metamaterials consisting of resonant metallic structures embedded in a dielectric environment locally enhance the electromagnetic field of an incident THz pulse to values sufficiently high to cause …
View article: Precise determination of low energy electronuclear Hamiltonian for LiY$_{1-x}$Ho$_{x}$F$_{4}$
Precise determination of low energy electronuclear Hamiltonian for LiY$_{1-x}$Ho$_{x}$F$_{4}$ Open
We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resol…
View article: Continuous wave lasing in strained germanium microbridge
Continuous wave lasing in strained germanium microbridge Open
International audience
View article: Taking advantage of multiplet structure for lineshape analysis in Fourier space
Taking advantage of multiplet structure for lineshape analysis in Fourier space Open
Lineshape analysis is a recurrent and often computationally intensive task in optics, even more so for multiple peaks in the presence of noise. We demonstrate an algorithm which takes advantage of peak multiplicity ( N ) to retrieve line s…
View article: Taking advantage of multiplet structure for lineshape analysis in\n Fourier space
Taking advantage of multiplet structure for lineshape analysis in\n Fourier space Open
Lineshape analysis is a recurrent and often computationally intensive task in\noptics, even more so for multiple peaks in the presence of noise. We\ndemonstrate an algorithm which takes advantage of peak multiplicity (N) to\nretrieve line …
View article: Surface Morphology of 4H-SiC after Thermal Oxidation
Surface Morphology of 4H-SiC after Thermal Oxidation Open
Step-controlled growth of 4H-SiC epitaxial layers leads to the formation of a step-bunched morphology along the surface with larger macrosteps, composed of smaller microsteps of several Si-C bilayer heights. As thermal oxidation is an orie…
View article: Silicon carbide X-ray beam position monitors for synchrotron applications
Silicon carbide X-ray beam position monitors for synchrotron applications Open
In this work, the performance of thin silicon carbide membranes as material for radiation hard X-ray beam position monitors (XBPMs) is investigated. Thermal and electrical behavior of XBPMs made from thin silicon carbide membranes and sing…
View article: Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers Open
Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with in…
View article: Emerging optical gain in highly strained Germanium
Emerging optical gain in highly strained Germanium Open
Cavity mode analysis of photoluminescence spectra of uniaxial tensile stressed GeOI micro-bridges is shown. Several cavity modes show a strong increase of the Q-factor, which is signature of the emergent optical amplification due to gain.
View article: Strain and thermal conductivity in ultrathin suspended silicon nanowires
Strain and thermal conductivity in ultrathin suspended silicon nanowires Open
We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme-ultraviolet (UV) interference lithography. Laser-power-depen…
View article: Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers Open
In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses betwe…
View article: Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces Open
In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (<1nm), surface with one with a roughness of ~40nm, characterized by big macrosteps and…
View article: Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES Open
The electronic structure of the SiO2/SiC (0001) interface, buried below SiO2 layers with a thickness from 2 to 4 nm, was explored using soft X-ray angle-resolved photoemission spectroscopy with photon energies between 350 and 1000 eV. The …
View article: Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress
Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress Open
The application of high values of strain to Ge considerably improves its light emission properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy is routinely used for strain measurements. Typical Raman-strai…
View article: Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering Open
Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-d…
View article: Accurate strain measurements in highly strained Ge microbridges
Accurate strain measurements in highly strained Ge microbridges Open
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using e…
View article: Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain Open
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
View article: Lattice strain and tilt mapping in stressed Ge microstructures using\n X-ray Laue micro-diffraction and rainbow-filtering
Lattice strain and tilt mapping in stressed Ge microstructures using\n X-ray Laue micro-diffraction and rainbow-filtering Open
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction\nwere used to measure accurately the full strain tensor and the lattice\norientation distribution at the sub-micron scale in highly strained, suspended\nGe micro-de…
View article: Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers
Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers Open
International audience
View article: THz near-field enhancement by means of isolated dipolar antennas: the effect of finite sample size
THz near-field enhancement by means of isolated dipolar antennas: the effect of finite sample size Open
Generation of high intensity terahertz radiation in the low frequency region (f < 5 THz) is still a challenging task and only few experimental demonstrations exceeding 1 MV/cm have been reported so far. One viable option is the use of reso…
View article: Uniaxially stressed germanium with fundamental direct band gap
Uniaxially stressed germanium with fundamental direct band gap Open
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensi…
View article: Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities
Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities Open
The concept of direct band gap group IV materials may offer a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: the idea is to integrate fully compatible group IV materials with equally favorable …
View article: Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications Open
Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (…