H. Wenzel
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View article: Passive harmonic mode-locked laser on lithium niobate integrated photonics
Passive harmonic mode-locked laser on lithium niobate integrated photonics Open
Mode-locked lasers (MLLs) are essential for a wide range of photonic applications, such as frequency metrology, biological imaging, and high-bandwidth coherent communications. The growing demand for compact and scalable photonic systems is…
View article: 420 W pulse power from a 905 nm distributed bragg reflector laser with multiple active regions and tunnel junctions
420 W pulse power from a 905 nm distributed bragg reflector laser with multiple active regions and tunnel junctions Open
We report a record-high pulse power of 420 W or a pulse energy of 4.2 μJ at a pulse current of 210 A, emitted by a single distributed Bragg reflector broad-area laser with 5 active regions separated by 4 tunnel junctions. The laser is oper…
View article: Theoretical study of Bragg reflection waveguide laser structures with surface gratings for spontaneous parametric down conversion
Theoretical study of Bragg reflection waveguide laser structures with surface gratings for spontaneous parametric down conversion Open
Bragg reflection waveguides (BRW) enable the generation of photon pairs in non-birefringent AlGaAs through spontaneous parametric down conversion (SPDC). Furthermore, the development of an electrically driven laser source from a passive BR…
View article: Repetition Frequency Detuning in Mode‐Locked Lasers with Integrated S‐Bend Waveguide
Repetition Frequency Detuning in Mode‐Locked Lasers with Integrated S‐Bend Waveguide Open
We present the integration of an S‐bend waveguide into the cavity of a mode‐locked diode laser to tune its repetition frequency for use in terahertz time‐domain spectroscopy applications. The mode‐locked diode laser, featuring a facet‐to‐f…
View article: Tunable and Wavelength‐Stabilised Laser Based on a Bragg Reflection Waveguide for Spontaneous Parametric Down Conversion
Tunable and Wavelength‐Stabilised Laser Based on a Bragg Reflection Waveguide for Spontaneous Parametric Down Conversion Open
Bragg reflection waveguide lasers offer compact solutions for the generation of photon pairs through spontaneous parametric down conversion, by simultaneously generating the lasing pump light and converting it into photon pairs within the …
View article: Spatio-temporal modeling and simulation of a mode-locked tapered semiconductor diode laser
Spatio-temporal modeling and simulation of a mode-locked tapered semiconductor diode laser Open
We present a theoretical model and numerical simulation results of the dynamics of a monolithic edge-emitting mode-locked tapered quantum well laser. The comprehensive simulation employs a dimensional traveling wave model and incorp…
View article: GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers
GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers Open
This paper reports on a monolithically integrated gallium arsenide (GaAs)-based photonic integrated circuit platform for wavelengths around 1064 nm. Enabled by spatially selective quantum well removal and two-step epitaxial growth, it supp…
View article: Design of very-large area photonic crystal surface emitting lasers with an all-semiconductor photonic crystal
Design of very-large area photonic crystal surface emitting lasers with an all-semiconductor photonic crystal Open
We report on the design of a photonic crystal surface emitting laser (PCSEL) with an all-semiconductor (InGaP/GaAs) photonic crystal suitable for very-large-area emission and high-power operation. Using coupled-wave theory for PCSELs we mo…
View article: Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm
Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm Open
The authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at 6…
View article: High‐power mode‐hop‐free tunable DFB laser at 780 nm
High‐power mode‐hop‐free tunable DFB laser at 780 nm Open
A distributed feedback laser with integrated quarter‐wave phase shift and more than 100 mW optical output power at an emission wavelength of 780 nm is presented. The laser provides mode‐hop‐free tuning over a wide range of injections curre…
View article: SOLVING A SPECTRAL PROBLEM FOR LARGE-AREA PHOTONIC CRYSTAL SURFACE-EMITTING LASERS
SOLVING A SPECTRAL PROBLEM FOR LARGE-AREA PHOTONIC CRYSTAL SURFACE-EMITTING LASERS Open
We present algorithms for constructing and resolving spectral problems for novel photonic crystal surface-emitting lasers with large emission areas, given by first-order PDEs with two spatial dimensions. These algorithms include methods to…
View article: Monolithically integrated multimode interference coupler-based master oscillator power amplifier with dual-wavelength emission around 830 nm
Monolithically integrated multimode interference coupler-based master oscillator power amplifier with dual-wavelength emission around 830 nm Open
A monolithically integrated dual-wavelength multimode interference coupler-based master oscillator power amplifier is presented. It consists of two shallowly etched, laterally separated ridge waveguide laser cavities as master oscillators …
View article: Optical Mode Calculation in Large-Area Photonic Crystal Surface-Emitting Lasers
Optical Mode Calculation in Large-Area Photonic Crystal Surface-Emitting Lasers Open
We discuss algorithms and numerical challenges in constructing and resolving spectral problems for photonic crystal surface-emitting lasers (PCSELs) with photonic crystal layers and large (up to several tens of mm) emission areas. We show …
View article: Relative Intensity Noise in a Two‐Section Distributed Bragg Reflector Tapered Laser
Relative Intensity Noise in a Two‐Section Distributed Bragg Reflector Tapered Laser Open
The relative intensity noise (RIN) in a two‐section distributed Bragg reflector (DBR) tapered laser emitting around 1060 nm is being studied experimentally. By analyzing the RIN spectra, a resonance frequency and damping is obtained. Herei…
View article: Theory of the linewidth-power product of photonic-crystal surface-emitting lasers
Theory of the linewidth-power product of photonic-crystal surface-emitting lasers Open
A general theory for the intrinsic (Lorentzian) linewidth of photonic--crystal surface--emitting lasers (PCSELs) is presented. The effect of spontaneous emission is modeled by a classical Langevin force entering the equation for the slowly…
View article: Optimization of high power AlGaInP laser diodes at 626 nm
Optimization of high power AlGaInP laser diodes at 626 nm Open
The rapid advancement of $$^{9}\hbox {Be}^{+}$$ ion-based quantum computing is creating a high demand for scalable and specialized laser sources. For this purpose, laser radiation at 313 nm is necessary which is generated by frequen…
View article: CaTS: Integration of Geant4 and Opticks
CaTS: Integration of Geant4 and Opticks Open
CaTS [6]is an advanced example that is part of Geant4 since version 11.0. It demonstrates the use of Opticks to offload the simulation of optical photons to GPUs. Opticks interfaces with the Geant4 toolkit to collect all the necessary info…
View article: Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm
Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm Open
Spatial-hole-burning as a limit to the continuous-wave (CW) output power of GaAs-based diode lasers is experimentally studied. For 90 μm stripe lasers with 6 mm resonator length and 0.8% front facet reflectivity, spontaneous emission (SE) …
View article: Generation of Picosecond Pulses from Tapered Laser Diodes with over 40 W Peak Power at Wavelengths of 780 nm and 830 nm
Generation of Picosecond Pulses from Tapered Laser Diodes with over 40 W Peak Power at Wavelengths of 780 nm and 830 nm Open
Mode-locked diode lasers, with their compact size and low price, are regarded as a promising alternative for the widely used Ti:sapphire lasers and fiber lasers in generating ultrashort optical pulses. Mode-locked quantum well diode lasers…
View article: Spectral behavior of high-power distributed feedback lasers
Spectral behavior of high-power distributed feedback lasers Open
The mode hopping behavior of high-power distributed feedback lasers emitting near $$780\,\hbox {nm}$$ is studied. The lasers have highly reflective rear and anti-reflection coated front facets. The influence of the phase of the grating…
View article: Impact of the capture time on power saturation of quantum-well diode lasers
Impact of the capture time on power saturation of quantum-well diode lasers Open
Injected electrons and holes are captured into quantum wells with a non-vanishing time. Simulation results are presented, showing that this results in a non-equilibrium of free and bound carriers in a diode laser. Analysis of an exemplary …
View article: Picosecond pulses with 40 W peak power from a passively mode‐locked tapered quantum well laser
Picosecond pulses with 40 W peak power from a passively mode‐locked tapered quantum well laser Open
In this letter, the authors present a monolithic edge emitting diode laser intended as a potential key component for the generation of terahertz radiation in a compact time‐domain spectroscopy system. The 6 mm long multi‐section InGaAsP do…
View article: Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions
Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions Open
The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each hav…
View article: High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness
High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness Open
We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-aligned lateral structure ‘eSAS’, having a strongly reduced lasing threshold and improved peak conversion efficiency and beam quality in com…
View article: Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm
Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm Open
The spectral linewidth of semiconductor lasers is a crucial performance parameter in a growing number of applications. A common method to improve the coherence of the laser relies on increasing the optical cavity length by an extended sect…
View article: Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity Open
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper…
View article: Distributed Bragg reflector lasers emitting between 696 and 712 nm
Distributed Bragg reflector lasers emitting between 696 and 712 nm Open
The authors report on design, fabrication, and electro‐optical characterization of single‐frequency diode lasers emitting around 696, 707, and 712 nm. This has been achieved by a variation of the periods of the 10th order surface Bragg gra…
View article: Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions
Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions Open
The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each hav…