Haley E. Dishman
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View article: Micro-transfer printing of GaN HEMTs on engineered substrates for use in harsh environments
Micro-transfer printing of GaN HEMTs on engineered substrates for use in harsh environments Open
Heterogeneous integration of gallium nitride (GaN) devices is essential to overcome the intrinsic material limitations in advanced electronics. For the successful incorporation of an integration technique into industry, a highly scalable p…
View article: Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion
Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion Open
Achieving high p -type doping levels selectively in gallium nitride (GaN) is a nontrivial task. In this work, we present a method for diffusing Mg from a finite source into the GaN layer, creating a highly doped layer with Mg without the n…
View article: Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy
Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy Open
In this work, we evaluate the quality of a commercially available GaN/AlGaN structure grown on Qromis Substrate Technology using Raman spectroscopy. Using the shift of the E2H peak, we calculated that initially this GaN structure has a low…