Han‐Wool Yeon
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View article: Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems Open
Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in …
View article: Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces
Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces Open
Amorphous oxide semiconductor (AOS)-based Schottky diodes have been utilized for selectors in crossbar array memories to improve cell-to-cell uniformity with a low-temperature process. However, thermal instability at interfaces between the…
View article: Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays Open
Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, a…
View article: Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states
Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states Open
The electronic states of oxygen vacancies (VO s) in amorphous oxide semiconductors are shallow donors, deep donors or electron traps; these are determined by the local atomic structure. Because the amorphous phase is metastable compared wi…
View article: Bending Fatigue Reliability Improvements of Cu Interconnects on Flexible Substrates through Mo-Ti Alloy Adhesion Layer
Bending Fatigue Reliability Improvements of Cu Interconnects on Flexible Substrates through Mo-Ti Alloy Adhesion Layer Open
유연 기판에 증착된 구리 박막과 구리 배선의 기계적 피로 현상에 대해 조사하고, 몰리브덴-티타늄 합금 접착 층을 이용해 피로 신뢰성을 향상시키는 연구를 진행하였다. 구리 배선의 경우 구리 박막에 비해 인장 굽힘 피로수명이 약 3배, 압축 굽힘 피로수명은 약 6배 가량 감소하는 것으로 측정되었으며, 기계적 균열 생성에 의한 파괴가 더욱 치명적으로 작용할 수 있다. 몰리브덴-티타늄 접착층이 있을 경우, 구리 배선의 피로수명이 인…