S. Qureshi
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View article: Where Do Patients With Cirrhosis Die? A <scp>CDC WONDER</scp> Analysis From 1999 to 2020
Where Do Patients With Cirrhosis Die? A <span>CDC WONDER</span> Analysis From 1999 to 2020 Open
Background Liver Cirrhosis is a growing cause of morbidity and mortality worldwide, but significant knowledge gaps remain regarding disparities in the place of patient death. This study aims to analyze the place of death trends for cirrhos…
View article: Highly efficient CeF3/ZnO nanocomposite for the degradation of organic dye under visible light irradiation
Highly efficient CeF3/ZnO nanocomposite for the degradation of organic dye under visible light irradiation Open
In this study, cerium cerium fluoride/zinc oxide (CeF3/ZnO) nanocomposites were prepared using a simple co-precipitation method with different weight percent ratios of CeF3 (1, 3, 5, 7, and 9 wt%). The as-synthesized nanocomposites were ch…
View article: Development of Highly Sensitive and Selective Electrochemical Glucose Sensors Based on the Modification of the Surface, Structural, and Morphological Properties of ZnO Using Vitamin-B Complexes
Development of Highly Sensitive and Selective Electrochemical Glucose Sensors Based on the Modification of the Surface, Structural, and Morphological Properties of ZnO Using Vitamin-B Complexes Open
Non-enzymatic electrochemical glucose sensors are particularly advantageous because of their simplicity, low cost, efficiency, and long storage life. ZnO structures were modified with water-soluble vitamin B12, B9, and B6 complexes in alka…
View article: Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part I: Theory and Methodology
Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part I: Theory and Methodology Open
A novel planar device having doped silicon regions (tubs) under the source and drain of an FDSOI MOSFET is reported at 20 nm gate length. The doped silicon regions result in formation of potential wells (PW) in the source and drain regions…
View article: Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part II: Scalability to 10 nm Gate Length
Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part II: Scalability to 10 nm Gate Length Open
The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET pre…
View article: Performance Considerations of Thin Ferroelectrics (~10 nm HfO2, ~20 nm PZT) FDSOI NCFETs for Digital Circuits at Reduced Power Consumption
Performance Considerations of Thin Ferroelectrics (~10 nm HfO2, ~20 nm PZT) FDSOI NCFETs for Digital Circuits at Reduced Power Consumption Open
The paper presents simulation study of thin ferroelectrics (Si doped HfO2, PZT) PGP FDSOI NCFETs at circuit level for high performance, low VDD low-power digital circuits. The baseline PGP FDSOI MOSFET has 20 nm metal gate length with supp…