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View article: Toward high-throughput deposition of III-V materials and devices using halide vapor phase epitaxy
Toward high-throughput deposition of III-V materials and devices using halide vapor phase epitaxy Open
III-V devices are used in countless applications due to their excellent physical properties. They could become more prevalent, especially in area-intensive applications such as solar power, if they can achieve significant cost decreases th…
View article: Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate
Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate Open
A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06 × 10 −4 Ω.cm 2 and 3.71 × 10 −4 Ω.cm 2 was measured, respectively. Our studies relied on an RF sp…
View article: Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations Open
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent …
View article: Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations Open
Hydride vapor phase epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent …
View article: High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup>
High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup> Open
This paper presents vertical (001) oriented $\\beta$-Ga$_2$O$_3$ field plated\n(FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric\nfield oxide. A thin drift layer of 1.7 $\\mu m$ was used to enable a\npunch-thro…
View article: High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$
High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$ Open
This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through (…
View article: Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films Open
Halide vapor phase epitaxy was used to grow homoepitaxial films of β-Ga2O3 on bulk (010) crystals and heteroepitaxial films of α-Ga2O3 on c-plane sapphire substrates. The β-Ga2O3 substrates were prepared prior to growth to remove sub-surfa…