Hi‐Deok Lee
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View article: The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode
The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode Open
In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which h…
View article: Porous materials as effective chemiresistive gas sensors
Porous materials as effective chemiresistive gas sensors Open
This review emphasizes the crucial role of chemiresistive gas sensors (CGS) in gas detection. It underscores porous materials as alternatives, showcasing their exceptional attributes. The review explores CGS-based porous materials in real-…
View article: Performance enhancement of HfO<sub>2</sub>-based resistive random-access memory devices using ZnO nanoparticles
Performance enhancement of HfO<sub>2</sub>-based resistive random-access memory devices using ZnO nanoparticles Open
In this study, resistive random-access memory (ReRAM) devices with ZnO nanoparticles (NPs) are suggested to enhance performance and reduce variation in device switching parameters. The ZnO NPs are formed by annealing ZnO prepared via atomi…
View article: Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods
Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods Open
In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fab…
View article: Effect of High-Pressure D2 and H2 Annealing on LFN Properties in FD-SOI pTFET
Effect of High-Pressure D2 and H2 Annealing on LFN Properties in FD-SOI pTFET Open
The effect of high-pressure deuterium annealing and hydrogen annealing on the electrical performance and the low-frequency noise properties in fully-depleted silicon-on-insulator p–type tunneling field-effect transistor (pTFET) was investi…
View article: A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET
A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET Open
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET). We demonstrated that the origin of LFN properties…
View article: Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory Open
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface r…
View article: High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications
High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications Open
In this study, the deuterium passivation effect of silicon nitride (Si3N4) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si3N4 as a charge trapping …
View article: Zinc Oxide and IGZO Bi-layer Synaptic Device with Highly Linear Long-term Potentiation and Depression Characteristics
Zinc Oxide and IGZO Bi-layer Synaptic Device with Highly Linear Long-term Potentiation and Depression Characteristics Open
The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO memristors were investigated for synapse application. The use of ox…
View article: A 5.43 nV/√Hz Chopper Operational Amplifier Using Lateral PNP Input Stage with BJT Current Mirror Base Current Cancellation
A 5.43 nV/√Hz Chopper Operational Amplifier Using Lateral PNP Input Stage with BJT Current Mirror Base Current Cancellation Open
This paper presents a low-noise chopper operational amplifier using a lateral PNP input stage with bipolar junction transistor (BJT) current mirror base current cancellation. The BJT has a lower noise characteristic than the metal–oxide–se…
View article: Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory
Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory Open
In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitrid…
View article: Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi
Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi Open
In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used f…
View article: Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs Open
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The VT degradation that represents device lifetime of p-MOSFETs with fluorine…
View article: Mitigation of Arsenic Contamination on the Back Side of Si Wafer Using SiO<sub>2</sub>Protection Layer for III-V on Si Heterogeneous Epitaxy
Mitigation of Arsenic Contamination on the Back Side of Si Wafer Using SiO<sub>2</sub>Protection Layer for III-V on Si Heterogeneous Epitaxy Open
In this paper, we have investigated a pathway to mitigate the arsenic (As) cross-contamination on a back side Si wafer during GaAs growth by metal-organic chemical vapor deposition (MOCVD). Without a proper protocol doing a III-V on Si het…