Explanipedia

Electrostatically-sprayed carbon electrodes for high performance organic complementary circuits Open

Kazuyoshi Watanabe, Naoki Miura, Hiroaki Taguchi, Takeshi Komatsu, Hideyuki Nosaka , et al. · 2022

Improvement of contact resistance at carbon electrode/organic semiconductor interfaces through chemical doping Open

Kazuyoshi Watanabe, Naoki Miura, Hiroaki Taguchi, Takeshi Komatsu, Hideyuki Nosaka , et al. · 2022

Organic thin-film transistors (OTFTs) are promising building blocks for low cost, low-environmental load, and lightweight electronic devices. Carbon-based conductors can be potentially used as TFT electrodes. However, a concern is that the…

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation Open

Ibrahim Abdo, Carrel da Gomez, Chun Wang, Kota Hatano, Qi Li , et al. · 2022

This article introduces a four-element 300-GHz-band bi-directional phased-array transceiver (TRX). The TRX utilizes the same antenna, signal path, and local oscillator (LO) circuitry to operate either in transmitter (TX) mode or receiver (…

64QAM wireless link with 300GHz InP-CMOS hybrid transceiver Open

Ibrahim Abdo, Hiroshi Hamada, Hideyuki Nosaka, Atsushi Shirane, Kenichi Okada · 2021

This letter presents a 300GHz hybrid transceiver using CMOS and InP-HEMT, which achieves a maximum data rate of 56Gb/s. A 300GHz CMOS transceiver with a mixer-last transmitter mixer-first receiver is utilized to up- and down-convert the V-…

Ultra-high-speed 300-GHz InP IC Technology for Beyond 5G Open

Hiroshi Hamada, Takuya Tsutsumi, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka · 2021

A 300-GHz-band 120 Gbit/s wireless transceiver (TRX) is presented using our in-house indium phosphide (InP) high-electron-mobility transistor (InP-HEMT) technology.A 300-GHz power amplifier (PA), which is the key component in the TRX, was …

Wide-Band Inline-Amplified WDM Transmission Using PPLN-Based Optical Parametric Amplifier Open

Takayuki Kobayashi, Shimpei Shimizu, Masanori Nakamura, Takeshi Umeki, Takushi Kazama , et al. · 2020

This article proposes an optical parametric amplifier (OPA), as an inline-repeater, using a periodically-poled-LiNbO 3 (PPLN) waveguide with over-10-THz amplification bandwidth, and also presents wide-band wavelength-division-multiplexing …

>100-GHz Bandwidth Directly-Modulated Lasers and Adaptive Entropy Loading for Energy-Efficient >300-Gbps/λ IM/DD Systems Open

Nikolaos-Panteleimon Diamantopoulos, Hiroshi Yamazaki, Suguru Yamaoka, Munehiko Nagatani, Hidetaka Nishi , et al. · 2020

We demonstrate DML-based net 325-Gb/s at back-to-back and 321.24-Gb/s after 2-km standard single-mode fiber transmissions for >300-Gbps/λ short-reach optical interconnects. Our net rate performance denotes an increase of ∼34% compared to o…

Ultra-high-capacity Optical Communication Technology Open

Kazuhide Nakajima, Yutaka Miyamoto, Hideyuki Nosaka, Mitsuteru Ishikawa · 2020

We are researching two new technologies for sustainably and economically responding to the exponentially increasing demand for data communications: (i) optical-fiber technology for space-division multiplexing transmission overcoming the ca…

Net-400-Gbps PS-PAM transmission using integrated AMUX-MZM Open

Hiroshi Yamazaki, Masanori Nakamura, Takayuki Kobayashi, Munehiko Nagatani, Hitoshi Wakita , et al. · 2019

Simple high-speed optical transmission technologies are desired for use in intra-and inter-datacenter networks. In this study, we demonstrate simple single-carrier intensity-modulated direct-detection (IMDD) transmissions at a net data rat…

Ultrahigh-speed Optical Front-end Device Technology for Beyond-100-GBaud Optical Transmission Systems Open

Munehiko Nagatani, Hitoshi Wakita, Yoshihiro Ogiso, Hiroshi Yamazaki, M. Ida , et al. · 2019

To support sustainable progress of optical communications, intense research and development (R&D) is being conducted to expand the transmission capacity per channel (transmission capacity per wavelength).Beyond-100-GBaud high-symbol-rate o…

A wideband current-reuse-RGC TIA circuit with low-power consumption Open

Akira Hida, Yusuke Nakane, Shunta Mizuno, Makoto Nakamura, Daisuke Ito , et al. · 2019

This paper presents a new Gain-Adder (GA) circuit for Current-Reuse (CR)-RGC TIA. The proposed GA circuit employs one transistor alone to enhance bandwidth and decrease power consumption. The proposed CR-RGC TIA circuit is designed in a 65…

Low‐temperature‐dependence CMOS linear driver with serial peripheral interface for 64‐Gbaud ultra‐low power coherent optical transmitters Open

Josuke Ozaki, Satoshi Nakano, Teruo Jyo, Munehiko Nagatani, Yoshihiro Ogiso , et al. · 2018

The authors used 65‐nm CMOS technology to develop a linear four‐channel driver IC with low temperature dependence and ultra‐low power dissipation for 64‐Gbaud coherent optical transmitters. The driver showed more than a 48‐GHz 3‐dB electri…

Digital-preprocessed Analog-multiplexed Digital-to-analog Converter for Ultrahigh-speed Optical Transmitter Open

Hiroshi Yamazaki, Munehiko Nagatani, Fukutaro Hamaoka, Masanori Nakamura, Toshikazu Hashimoto , et al. · 2018

We have developed technology to extend the analog bandwidth of digital-to-analog converters (DACs), which are essential in advanced high-speed optical transmitters.We used a digital preprocessor, two sub-DACs, and an analog multiplexer to …

Very Low Power Analog IC Techniques Open

Toshiki Kishi, Munehiko Nagatani, Wataru Kobayashi, M. Ida, Kenji Kurishima , et al. · 2017

We are studying the development of very compact next-generation optical transceivers by using integrated design techniques of photonics-electronics implementation.We introduce in this article the techniques used to design analog integrated…

Photonics-electronics Convergence Design for Digital Mock-up Open

Kotaro Takeda, Kentaro Honda, Hideyuki Nosaka, Hiroshi Fukuda, Tsuyoshi Yamamoto · 2016

We developed a design technique for an electronic and photonic integrated circuit that involves using an equivalent circuit of optical devices in an electrical circuit simulator.Key features are the use of structural and physical parameter…

High-speed Electronic and Optical Device Technologies for Ultralarge-capacity Optical Transmission Open

Hiroshi Yamazaki, Munehiko Nagatani, Toshikazu Hashimoto, Hideyuki Nosaka, Akihide Sano , et al. · 2016

Fabrication and characteristicsWe have developed fabrication technologies for indium-phosphide (InP) heterojunction bipolar transistor (HBT) devices, which are promising for highspeed applications in photonic networks [2].We used

High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems Open

Munehiko Nagatani, Hideyuki Nosaka · 2016

Communications traffic over photonic networks is exponentially increasing due to the spread of broadband applications. To cope with the rapid growth, novel 100-Gb/s digital coherent systems have been deployed recently in optical core netwo…

R&D Trends in Convergence of Photonic and Electronic Hardware for Network Innovation Open

S. Mutoh, Hirokazu Takenouchi, Hideyuki Nosaka, Toshikazu Hashimoto, Akihiko Miyazaki · 2016

Network traffic will continue to increase exponentially as we get closer to deploying fifth generation mobile networks, and as the Internet of Things and big data services expand through 2020 and beyond.In these Feature Articles, we look a…

75 GBd InP‐HBT MUX‐DAC module for high‐symbol‐rate optical transmission Open

Munehiko Nagatani, Hitoshi Wakita, Hideyuki Nosaka, Kenji Kurishima, M. Ida , et al. · 2015

An ultra‐broadband 6 bit digital‐to‐analogue converter (DAC) has been designed and fabricated in InP‐HBT technology. The DAC IC includes six 2:1 MUXs and thus operates with a half‐rate clock. The DAC module is equipped with 1 mm connectors…

28 Gbaud 16-QAM modulation with compact driver module for InP MZM Open

Hitoshi Wakita, Munehiko Nagatani, Shigeru Kanazawa, Toshihiro Ito, E. Yamada , et al. · 2015

This paper presents a compact driver module for InP Mach-Zehnder modulator (MZM). The size of the driver module is 14 mm × 8 mm × 2.8 mm. We reduce the size of this driver module by integrating two channels for the driver IC, which doesn’t…

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