Hisashi Murakami
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View article: Dual roles of salivary proteins in feeding and silk fiber coating in the spider mite Tetranychus urticae
Dual roles of salivary proteins in feeding and silk fiber coating in the spider mite Tetranychus urticae Open
View article: The variation in the amount of black carbon particles deposited on leaves at different positions in the canopy of mature Cornus florida and related factors
The variation in the amount of black carbon particles deposited on leaves at different positions in the canopy of mature Cornus florida and related factors Open
In urban areas, black carbon (BC) particles with an aerodynamic diameter of 2.5 µm or less (PM 2.5 ) have adverse effects on human health. Urban greening is considered a potential solution to mitigate air pollution caused by BC particles, …
View article: Renal Transplantation in Relation to Positive T-Cell Flow Cytometric Crossmatch: A Retrospective Study
Renal Transplantation in Relation to Positive T-Cell Flow Cytometric Crossmatch: A Retrospective Study Open
View article: Differentiation between epicardial and endocardial conduction gaps for left atrial posterior wall isolation using peak frequency annotation algorithm
Differentiation between epicardial and endocardial conduction gaps for left atrial posterior wall isolation using peak frequency annotation algorithm Open
View article: Relationship between the amount of black carbon particles deposited on the leaf surface and leaf surface traits in nine urban greening tree species
Relationship between the amount of black carbon particles deposited on the leaf surface and leaf surface traits in nine urban greening tree species Open
To select urban greening tree species suitable for the purification of the atmosphere polluted by black carbon (BC) particles, it is necessary to clarify the determinants of the amount of BC particles deposited on the tree leaves. In the p…
View article: Investigation of high speed <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> growth by solid-source trihalide vapor phase epitaxy
Investigation of high speed <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> growth by solid-source trihalide vapor phase epitaxy Open
Trihalide vapor phase epitaxy (THVPE) is a new type of halide vapor phase epitaxy (HVPE) that uses GaCl 3 as a group III source, enabling Ga 2 O 3 growth without particle generation, although the growth rate is low. In this study, β -Ga 2 …
View article: Observation of nanopipes in edge-defined film-fed grown <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> substrate and their effect on homoepitaxial surface hillocks
Observation of nanopipes in edge-defined film-fed grown <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> substrate and their effect on homoepitaxial surface hillocks Open
β -Ga 2 O 3 substrates and homoepitaxial films were characterized using the multiphoton excitation photoluminescence (MPPL) method. MPPL emission peaks at 3.2 and 3.36 eV were obtained with broad shoulders on the low energy side. MPPL imag…
View article: Transmural lesion formation after left atrial roof cryoballoon ablation: Insight from simultaneous high-density epicardial mapping
Transmural lesion formation after left atrial roof cryoballoon ablation: Insight from simultaneous high-density epicardial mapping Open
View article: The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO<sub>4</sub> through Trihalide Vapor‐Phase Epitaxy
The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO<sub>4</sub> through Trihalide Vapor‐Phase Epitaxy Open
Herein, the effect of intermediate layers for high‐speed InGaN growth using trihalide vapor‐phase epitaxy (THVPE) on ScAlMgO 4 (SAM) is investigated. The coverage and thickness of the intermediate layer have a significant impact on both co…
View article: Vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes with trench staircase field plate
Vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes with trench staircase field plate Open
This study presents vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a staircase field plate on a deep trench filled with SiO 2 . It was clarified from device simulation that at high reverse voltage operation, the staircase field plat…
View article: Split Ga vacancies in <i>n</i>-type and semi-insulating β-Ga2O3 single crystals
Split Ga vacancies in <i>n</i>-type and semi-insulating β-Ga2O3 single crystals Open
We report a positron annihilation study using state-of-the-art experimental and theoretical methods in n-type and semi-insulating β-Ga2O3. We utilize the recently discovered unusually strong Doppler broadening signal anisotropy of β-Ga2O3 …
View article: Growth of GaN on a three-dimensional SCAAT<sup>TM</sup> bulk seed by tri-halide vapor phase epitaxy using GaCl<sub>3</sub>
Growth of GaN on a three-dimensional SCAAT<sup>TM</sup> bulk seed by tri-halide vapor phase epitaxy using GaCl<sub>3</sub> Open
GaN with a film thickness of 200–600 μ m was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAAT TM ) bulk seed that comprised only semipolar planes at a temperature as high as 1390 °C by tri-ha…
View article: Electronic properties of the residual donor in unintentionally doped β-Ga2O3
Electronic properties of the residual donor in unintentionally doped β-Ga2O3 Open
Electron paramagnetic resonance was used to study the donor that is responsible for the n-type conductivity in unintentionally doped (UID) β-Ga2O3 substrates. We show that in as-grown materials, the donor requires high temperature annealin…
View article: Current status of Ga<sub>2</sub>O<sub>3</sub> power devices
Current status of Ga<sub>2</sub>O<sub>3</sub> power devices Open
Gallium oxide (Ga 2 O 3 ) is an emerging wide-bandgap semiconductor for high-power, low-loss transistors and diodes by virtue of its excellent material properties and suitability for mass production. In this paper, we begin by discussing t…
View article: Thermal and chemical stabilities of group-III sesquioxides in a flow of either N<sub>2</sub> or H<sub>2</sub>
Thermal and chemical stabilities of group-III sesquioxides in a flow of either N<sub>2</sub> or H<sub>2</sub> Open
The thermal and chemical stabilities of group-III sesquioxides (Al 2 O 3 , Ga 2 O 3 , and In 2 O 3 ) were comparatively investigated at an atmospheric pressure at heat treatment temperatures ranging from 250 to 1450 °C in a flow of either …
View article: Ga<sub>2</sub>O<sub>3</sub> field-plated schottky barrier diodes with a breakdown voltage of over 1 kV
Ga<sub>2</sub>O<sub>3</sub> field-plated schottky barrier diodes with a breakdown voltage of over 1 kV Open
We succeeded in fabricating HVPE-grown Ga 2 O 3 FP-SBDs with a record V br/sub> of over 1 kV. This is an important step in the research and development of Ga2O3 power devices toward practica…
View article: Anisotropy, phonon modes, and free charge carrier parameters in monoclinic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math>-gallium oxide single crystals
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic-gallium oxide single crystals Open
We derive a dielectric function tensor model approach to render the optical\nresponse of monoclinic and triclinic symmetry materials with multiple uncoupled\ninfrared and farinfrared active modes. We apply our model approach to\nmonoclinic…