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View article: Vertical GaN‐On‐GaN Micro‐LEDs for Near‐Eye Displays
Vertical GaN‐On‐GaN Micro‐LEDs for Near‐Eye Displays Open
In various micro‐light‐emitting diode (micro‐LED) display products, near‐eye applications such as AR (augmented reality) and VR (virtual reality) are gaining popularity, driving consumer demand for higher brightness, resolution, and compac…
View article: Development of AlN-loaded PET separators from waste water bottle plastics with superior thermal characteristics for next-generation lithium-ion batteries
Development of AlN-loaded PET separators from waste water bottle plastics with superior thermal characteristics for next-generation lithium-ion batteries Open
A thermally stable, excellent performance lithium-ion battery separator of AlN-modified PET was produced via electrospinning technology. PET was derived from waste water bottles.
View article: Improved Stability of Amorphous InGaZnO <sub>4</sub> Thin-Film Transistors Under Negative Bias Illumination Stress With Split Metal Cover Lines
Improved Stability of Amorphous InGaZnO <sub>4</sub> Thin-Film Transistors Under Negative Bias Illumination Stress With Split Metal Cover Lines Open
Negative bias illumination stress (NBIS) instability presents a significant challenge for the application of amorphous (a-IGZO) thin-film transistors (TFTs) in active-matrix displays. In this article, we demonstrate the effectiveness of i…
View article: In‐Sensor Computing‐Based Smart Sensing Architecture Implemented Using a Dual‐Gate Metal‐Oxide Thin‐Film Transistor Technology
In‐Sensor Computing‐Based Smart Sensing Architecture Implemented Using a Dual‐Gate Metal‐Oxide Thin‐Film Transistor Technology Open
An array of sensors generating a collection of correlated signals can benefit from integration with a “smart” system for autonomous inferencing. Mimicking their biological counterparts, smart sensor systems shall possess the capabilities o…
View article: A Sliding‐Kernel Computation‐In‐Memory Architecture for Convolutional Neural Network
A Sliding‐Kernel Computation‐In‐Memory Architecture for Convolutional Neural Network Open
Presently described is a sliding‐kernel computation‐in‐memory (SKCIM) architecture conceptually involving two overlapping layers of functional arrays, one containing memory elements and artificial synapses for neuromorphic computation, the…
View article: Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N<sub>2</sub> Treatments
Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N<sub>2</sub> Treatments Open
InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible ligh…
View article: A 6-bit Analog-to-Digital Converter for Electromyography Implemented Using N-Type Metal-Oxide Thin-Film Transistors
A 6-bit Analog-to-Digital Converter for Electromyography Implemented Using N-Type Metal-Oxide Thin-Film Transistors Open
Consisting of more than 2000 n-type metal-oxide thin-film transistors (TFTs), a 6-bit analog-to-digital converter (ADC) adopting the subranging architecture is designed, fabricated, characterized and applied to digitize an electromyogram (…
View article: An Integrated Analog Front‐End System on Flexible Substrate for the Acquisition of Bio‐Potential Signals
An Integrated Analog Front‐End System on Flexible Substrate for the Acquisition of Bio‐Potential Signals Open
The application of a versatile, low‐temperature thin‐film transistor (TFT) technology is presently described as the implementation on a flexible substrate of an analog front‐end (AFE) system for the acquisition of bio‐potential signals. Th…
View article: Editorial
Editorial Open
Dedicated to advancing the field of electron devices through open-access publication, the Journal of the Electron Devices Society (J-EDS) has made great strides since its inception in 2013. Thanks to the collective efforts of all stake hol…
View article: Does Vaping Increase the Likelihood of SARS-CoV-2 Infection? Paradoxically Yes and No
Does Vaping Increase the Likelihood of SARS-CoV-2 Infection? Paradoxically Yes and No Open
Data on the relationship between electronic cigarettes (ECs) and SARS-CoV-2 infection are limited and contradictory. Evidence indicates that EC aerosols or nicotine increase ACE2, SARS-CoV-2 virus receptors, which increase virus binding an…
View article: Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors Open
The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enable…
View article: Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors (Adv. Mater. Interfaces 14/2022)
Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors (Adv. Mater. Interfaces 14/2022) Open
Effect of Moisture and Temperature on Thin-Film Transistors In article number 2102584, Zhiying Chen, Meng Zhang, and co-workers study the effect of moisture exchange on device characteristics and instability in InSnZnO thin-film transistor…
View article: Stacked-Interconnect for Monolithic Integration of Low-Temperature Polysilicon and Amorphous Metal-Oxide Thin-Film Transistors
Stacked-Interconnect for Monolithic Integration of Low-Temperature Polysilicon and Amorphous Metal-Oxide Thin-Film Transistors Open
While offering a range of practical benefits, the monolithic integration of low-temperature polysilicon (LTPS) and amorphous metal-oxide thin-film transistors presents several incompatibility issues regarding materials and processes. Prese…
View article: Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors
Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors Open
Conduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 mu m) and different channel lengths (L=5, 10, 25, 50 and 100 mu m) are measured and analysis. Firstly,…
View article: P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors
P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors Open
Presently reported is the use of plasma fluorination treatment based on tetrafluoromethane to enhance the performance of a p‐type SnO thin‐film transistor (TFT). The improved performance metrics include a larger on/off current ratio, a sma…
View article: TRENCH-ISOLATED BULK-TYPE PRESSURE SENSOR ON SILICON-ON-INSULATOR FOR HIGH-TEMPERATURE AND HIGH-PRESSURE DOWNHOLE APPLICATIONS
TRENCH-ISOLATED BULK-TYPE PRESSURE SENSOR ON SILICON-ON-INSULATOR FOR HIGH-TEMPERATURE AND HIGH-PRESSURE DOWNHOLE APPLICATIONS Open
Presently reported is a dielectric-isolated bulk-type pressure sensor fabricated on silicon-on-insulator (SOI) that offers higher pressure capability than conventional diaphragm-type pressure sensors and wider temperature operating range t…
View article: Vertically Integrated Optical Sensor With Photoconductive Gain > 10 and Fill Factor > 70%
Vertically Integrated Optical Sensor With Photoconductive Gain > 10 and Fill Factor > 70% Open
A hybrid active pixel optical sensor for high-resolution and high-sensitivity imaging is proposed and experimentally demonstrated. The sensor vertically integrates an amorphous silicon p-i-n photodiode and a low-temperature polycrystalline…
View article: Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs
Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs Open
Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials…
View article: Overcoming the Limitations of Sputtered Nickel Oxide for High‐Efficiency and Large‐Area Perovskite Solar Cells
Overcoming the Limitations of Sputtered Nickel Oxide for High‐Efficiency and Large‐Area Perovskite Solar Cells Open
Perovskite solar cells (PSCs) are one of the promising photovoltaic technologies for solar electricity generation. NiO x is an inorganic p‐type semiconductor widely used to address the stability issue of PSCs. Although high efficiency is o…
View article: Low cost, high throughput and centimeter‐scale fabrication of efficient hybrid perovskite solar cells by closed space vapor transport
Low cost, high throughput and centimeter‐scale fabrication of efficient hybrid perovskite solar cells by closed space vapor transport Open
Hybrid perovskite solar cell is a fast‐growing photovoltaic technology. Here, we present a method based on the closed space vapor transport deposition, which has the potential for large‐scale production due to its low cost, high throughput…
View article: Identifying the Optimum Morphology in High‐Performance Perovskite Solar Cells
Identifying the Optimum Morphology in High‐Performance Perovskite Solar Cells Open
The study of the perovskite solar cells provides insight into the optimum morphology. A bilayer structure is required for efficient solar cells, and one with a high efficiencies of up to 15.2% and an open-circuit voltage (Voc) up to 1110 m…