Hogyoung Kim
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View article: Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer
Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer Open
Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer depo…
View article: A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes
A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes Open
GaN and related nitride semiconductors have attracted considerable interest for use in solid-state light and high-power/-frequency devices. Fabrication of high-quality metal/GaN Schottky contacts is essential to ensure that GaN-based devic…
View article: Nanoscale Schottky contacts to GaN: Theoretical study and a brief review
Nanoscale Schottky contacts to GaN: Theoretical study and a brief review Open
Nanostructured GaN materials, including nanowires and nanorods, are advantageous for nanoscale devices, owing to their higher surface-to-volume ratio than thin films. Despite the technological progress, there exist many issues to be solved…
View article: Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates
Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates Open
We grew ZnO films at different temperatures on glass substrates using thermal atomic layer deposition and investigated the current conduction mechanism of Pt/ZnO junctions. For ZnO samples grown at 46 and 96°C, the current flow through the…
View article: Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition
Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition Open
In this study, SnSe powders are nanocoated with ZnO grown by atomic layer deposition (ALD) with different ALD ZnO pulse cycles. Subsequently, the current transport mechanisms of Pt/ZnO-coated SnSe junctions are electrically investigated. A…
View article: Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review
Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review Open
Wide band gap III-nitride materials have gained considerable attention as promising semiconductor materials for light-emitting photonic diodes and high-frequency/power devices. However, the material quality of GaN grown on foreign substrat…
View article: Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes Open
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–vo…
View article: Dilatometric Analysis of the Sintering Behavior of Bi2Te3 Thermoelectric Powders
Dilatometric Analysis of the Sintering Behavior of Bi2Te3 Thermoelectric Powders Open
The sintering behavior of p-type bismuth telluride powder is investigated by means of dilatometric analysis. The alloy powders, prepared by ball milling of melt-spun ribbons, exhibit refined and flake shape. Differential thermal analysis r…
View article: Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition
Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition Open
Atomic layer deposited AlGaN on GaN substrate with different thicknesses was prepared and the electron transport mechanism of AlGaN/GaN Schottky diodes was investigated. Above 348 K, both 5 and 10 nm thick AlGaN showed that the thermionic …
View article: Atomic Layer Deposition of AlGaN on GaN and Current Transport Mechanism in AlGaN/GaN Schottky Diodes
Atomic Layer Deposition of AlGaN on GaN and Current Transport Mechanism in AlGaN/GaN Schottky Diodes Open
The current transport mechanism of AlGaN/GaN Schottky diodes prepared by atomic layer deposition (ALD) was explored using current–voltage (I–V) and capacitance–voltage (C–V) measurements. The Schottky barrier height decreased and the ideal…
View article: Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review
Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review Open
Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been app…
View article: Comparative Investigation of Interfacial Characteristics between HfO2/Al2O3 and Al2O3/HfO2 Dielectrics on AlN/p-Ge Structure
Comparative Investigation of Interfacial Characteristics between HfO2/Al2O3 and Al2O3/HfO2 Dielectrics on AlN/p-Ge Structure Open
The electrical and interfacial properties of HfO2/Al2O3 and Al2O3/HfO2 dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance–voltage(C–V) and current–voltage(I–V) measurements. In the…
View article: Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes
Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes Open
The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I–V–T) and depth-resolved X-ray photoelect…
View article: Interfacial Properties of Atomic Layer Deposited Al2O3/AlN Bilayer on GaN
Interfacial Properties of Atomic Layer Deposited Al2O3/AlN Bilayer on GaN Open
An Al2O3/AlN bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare Al2O3/AlN/GaN metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscop…
View article: Post deposition annealing effect on the properties of Al2O3/InP interface
Post deposition annealing effect on the properties of Al2O3/InP interface Open
Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the s…
View article: Characteristics of atomic layer deposited Gd<sub>2</sub>O<sub>3</sub> on n-GaN with an AlN layer
Characteristics of atomic layer deposited Gd<sub>2</sub>O<sub>3</sub> on n-GaN with an AlN layer Open
The interfacial and electrical properties of atomic layer deposited Gd2O3 with an AlN layer on n-GaN were investigated.
View article: Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition
Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition Open
We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al2O3/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H2O prepulse treatment by atomic layer de…
View article: Solar Cells: Transfer Printed Flexible and Stretchable Thin Film Solar Cells Using a Water‐Soluble Sacrificial Layer (Adv. Energy Mater. 21/2016)
Solar Cells: Transfer Printed Flexible and Stretchable Thin Film Solar Cells Using a Water‐Soluble Sacrificial Layer (Adv. Energy Mater. 21/2016) Open
Transfer printing of inorganic amorphous thin film semiconductors remains a challenge because no suitable sacrificial layer is available. In article number 1601269, Dong-Ho Kim, Sungjin Jo, and co-workers demonstrate a versatile transfer p…
View article: Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge
Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge Open
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance…
View article: Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources
Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources Open
We demonstrate a compact amorphous silicon (a-Si) solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography t…
View article: Electron Transport Mechanisms in Ag Schottky Contacts Fabricated on O-polar and Nonpolar m-plane Bulk ZnO
Electron Transport Mechanisms in Ag Schottky Contacts Fabricated on O-polar and Nonpolar m-plane Bulk ZnO Open
We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, wh…