Hsu‐Hung Hsueh
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View article: Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes Open
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic …
View article: Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications
Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications Open
Growth of hexagonal GaN on Si(100) templates via pulsed laser deposition (PLD) was investigated for the further development of GaN-on-Si technology. The evolution of the GaN growth mechanism at various growth times was monitored by SEM and…
View article: Chemical Lift-Off of Blue Light-Emitting Diodes Grown on Sapphire Substrate with an Oxide-Patterned Sacrificial Layer
Chemical Lift-Off of Blue Light-Emitting Diodes Grown on Sapphire Substrate with an Oxide-Patterned Sacrificial Layer Open
A high quality GaN epilayer was successfully grown on a sapphire substrate with patterned SiO2 as a sacrificial structure utilizing the direct heteroepitaxial lateral overgrowth method. The light-emitting diode (LED) structure was subseque…