Huije Ryu
YOU?
Author Swipe
View article: The effects of fabrication methods and build orientation on Candida albicans adhesion on 3D-printed and conventional denture resin: an in vitro comparative study
The effects of fabrication methods and build orientation on Candida albicans adhesion on 3D-printed and conventional denture resin: an in vitro comparative study Open
View article: Vertical Stacking of Atomic-Layer-Deposited Oxide Layers via a Fluorinated Graphene Transfer Technique
Vertical Stacking of Atomic-Layer-Deposited Oxide Layers via a Fluorinated Graphene Transfer Technique Open
Monolithic three-dimensional (M3D) integration of semiconductor devices offers a distinct advantage over two-dimensional size scaling by achieving higher connection densities between the device layers. Still, it presents several technologi…
View article: Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density
Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density Open
The foundry industry and academia dedicated to advancing logic transistors are encountering significant challenges in extending Moore's Law. In the industry, silicon (Si)-based transistors are currently adopting gate-all-around (GAA) struc…
View article: Optical grade transformation of monolayer transition metal dichalcogenides <i>via</i> encapsulation annealing
Optical grade transformation of monolayer transition metal dichalcogenides <i>via</i> encapsulation annealing Open
hBN-encapsulation annealing notably enhances the optical properties of monolayer TMDs by dedoping and improved crystallinity, offering a straightforward way to acquire optical grade TMDs and elucidating the fundamental mechanism for PL enh…
View article: 200-mm wafer scale integration of high performance polycrystalline MoS2 thin film transistors
200-mm wafer scale integration of high performance polycrystalline MoS2 thin film transistors Open
The demand for high-performance thin-film transistors (TFTs) has increased significantly due to the increasing functionalities of electronic devices, such as displays, sensors, and computing platforms. The requirements for TFTs have also b…
View article: Graphical Abstract: Angew. Chem. Int. Ed. 23/2023
Graphical Abstract: Angew. Chem. Int. Ed. 23/2023 Open
Covalent Organic FrameworksThetransformation of imine cages into acovalent organic framework film through dynamic covalent chemistry
View article: In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe<sub>2</sub>
In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe<sub>2</sub> Open
Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple phases at room temperature, making …
View article: In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2
In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2 Open
Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple phases at room temperature, making it a promis…
View article: Thermally Induced Atomic Reconstruction of Twisted Transition Metal Dichalcogenide Layers into Full-commensurate Structures
Thermally Induced Atomic Reconstruction of Twisted Transition Metal Dichalcogenide Layers into Full-commensurate Structures Open
Datasets for our submitted paper "Thermally Induced Atomic Reconstruction of Twisted Transition Metal Dichalcogenide Layers into Fully Commensurate Structures" quoted reference number NM23031005A.
View article: In-situ Imaging of Anisotropic Layer-by-layer Phase Transition in Few-layer MoTe2
In-situ Imaging of Anisotropic Layer-by-layer Phase Transition in Few-layer MoTe2 Open
Understanding the phase transition mechanisms in two-dimensional\n(2D) materials is a key to precisely tailor their properties at the\nnanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple\nphases at room temperature, maki…
View article: Fluorinated Graphene Contacts and Passivation Layer for MoS<sub>2</sub> Field Effect Transistors
Fluorinated Graphene Contacts and Passivation Layer for MoS<sub>2</sub> Field Effect Transistors Open
Realizing a future of 2D semiconductor‐based devices requires new approaches to channel passivation and nondestructive contact engineering. Here, a facile one‐step technique is shown that simultaneously utilizes monolayer fluorinated graph…
View article: Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus
Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus Open
The properties of metal-semiconductor junctions are often unpredictable\nbecause of non-ideal interfacial structures, such as interfacial defects or\nchemical reactions introduced at junctions. Black phosphorus (BP), an elemental\ntwo-dime…
View article: Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020)
Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020) Open
In article 2003567, Chul-Ho Lee, Gwan-Hyoung Lee, and co-workers report the development of a novel light-emitting field-effect transistor (LEFET) based on a van der Waals heterostructure. Multiple modes of operation are achieved by control…
View article: Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures Open
View article: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures Open