Huiwen Deng
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View article: Ge-rich homogenous GeSi alloying induced by Si–Ge interdiffusion under high temperature thermal cyclic annealing
Ge-rich homogenous GeSi alloying induced by Si–Ge interdiffusion under high temperature thermal cyclic annealing Open
Thermal cyclic annealing (TCA) is recognized as the key process in improving Ge film quality during epitaxial growth on Si substrates. In Ge-on-Si systems, annealing temperatures rarely exceed 900 °C due to the limitation of the Ge melting…
View article: High Performance Monolithic Integration of Light Amplifiers in Silicon Photonic Circuits
High Performance Monolithic Integration of Light Amplifiers in Silicon Photonic Circuits Open
Silicon photonics constitutes the cornerstone technology of on-chip optical interconnects. However, the seamless integration of gain elements with passive waveguides on silicon substrates remains a critical challenge. In this work, we demo…
View article: C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth Open
1550 nm InAs/InP quantum dot (QD) lasers are critical for C-band optical communication. To realise narrow photo-luminescence linewidth emission in this wavelength range, the indium flush (IF) technique for self-assembled QDs and the altern…
View article: Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy
Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy Open
Heteroepitaxial growth of Si-based semiconductor materials has become an efficient method for high-performance group-IV and III–V optoelectronic and electronic devices. As-manufactured epi-ready Si wafers frequently retain molecular residu…
View article: Optical gain in O-band active regions with multiple dot-in-well layers
Optical gain in O-band active regions with multiple dot-in-well layers Open
The optimum number of layers in InAs-based quantum dot-in-well active regions is investigated by means of sophisticated measurements of structures containing 8, 12, and 14 dot-in-well layers. Measurements of optical gain vs a parameter pro…
View article: Ultralow-threshold single-mode quantum-dot laser operating at O-band based on bound-states in the continuum
Ultralow-threshold single-mode quantum-dot laser operating at O-band based on bound-states in the continuum Open
Light sources for generation of optical angular momentum (OAM) are popular on telecommunication systems and in demand for key telecommunications platforms, including on-chip ultra-compact integrated communication systems, free-space optica…
View article: As-Flux-Induced Diameter Control in GaAs Nanowires
As-Flux-Induced Diameter Control in GaAs Nanowires Open
Controlling the diameter of self-catalyzed III-V nanowires is important for tailoring their performance in optoelectronic applications. Here, we investigate the impact of abrupt or gradual increase of the V/III flux ratio on the GaAs nanow…
View article: MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si
MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si Open
The monolithic integration of InAs/GaAs quantum-dot (QD) lasers on the silicon platform is critical for current high-speed optical communication and computing systems. However, the heteroepitaxial growth of high-performance InAs/GaAs QD la…
View article: Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration
Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration Open
A straightforward method to achieve monolithic selective area intermixing in an epitaxially grown InAs quantum dot (QD) based laser structure is demonstrated, enabling the development of O-band monolithic photonic integrated circuits. Blue…
View article: GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates
GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates Open
The propagation of antiphase boundaries (APBs) and threading dislocations (TDs) poses a significant impediment to the realisation of high‐quality group III–V semiconductors grown on group IV platforms. The complete annihilation of APBs and…
View article: Low threshold InAs/InP quantum dot lasers
Low threshold InAs/InP quantum dot lasers Open
InAs/InP quantum dot (QD) lasers are promising light sources for optical communication due to their discrete energy states, offering advantages such as low threshold current density and enhanced thermal stability. However, challenges remai…
View article: High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission
High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission Open
We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm …
View article: Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer
Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer Open
The direct epitaxy of III–V materials on CMOS-compatible on-axis Si (001) is vital for scalable, cost-effective optoelectronic devices. However, material dissimilarities introduce crystal defects, such as antiphase boundaries (APBs) and th…
View article: High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique
High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique Open
Working reliably at elevated operating temperatures is a key requirement for semiconductor lasers used in optical communication. InAs/GaAs quantum-dot (QD) lasers have been considered a promising solution due to the discrete energy states …
View article: Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes
Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes Open
Uni-Travelling-Carrier Photodiodes (UTC-PDs) are pivotal for the advancement of high-speed optical communication systems. Current UTC-PDs have a trade-off between high performance and low production costs. The performance of conventional G…
View article: The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots Open
Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III-V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown…
View article: Indium-flush technique for C-band InAs/InP quantum dots
Indium-flush technique for C-band InAs/InP quantum dots Open
High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP Q…
View article: Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review
Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review Open
The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In partic…
View article: 1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation
1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation Open
To further enhance the performance and understand the mechanism of InAs quantum dot (QD) laser under high temperature, both theoretically and experimentally it is investigated, the effects of the technique of the combination of direct n‐ty…
View article: Low‐Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures
Low‐Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures Open
The direct growth of III‐V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultradense photonic integration in vital communications and computing technologies. Howeve…
View article: Effects of phosphorous and antimony doping on thin Ge layers grown on Si
Effects of phosphorous and antimony doping on thin Ge layers grown on Si Open
Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desi…
View article: High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy Open
High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III–V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the d…
View article: Effects of phosphorous and antimony doping on thin Ge layers grown on Si
Effects of phosphorous and antimony doping on thin Ge layers grown on Si Open
Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desi…
View article: From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics
From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics Open
Monolithic growth of III-V materials onto Si substrates is appealing for realizing practical on-chip light sources for Si-based photonic integrated circuits (PICs). Nevertheless, the material dissimilarities between III-V materials and Si …
View article: The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates
The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates Open
Monolithic integration of III–V optoelectronic devices on Si platform is gaining momentum, since it enables advantages of low cost, less complexity and high yield for mass production. With the aim of achieving advances in monolithic integr…
View article: Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications
Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications Open
For the development of InAs/InP quantum dot (QD) lasers for 1.55 μ m telecom wavelength, there are two main challenges: (1) morphological preference for quantum dashes over QDs, and (2) generally poor size uniformity of QDs (dashes). This …
View article: Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration Open
We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (Si…
View article: Silicon Nitride Thermo-Optic On-Chip Mach-Zender Interferometer at Visible Wavelengths
Silicon Nitride Thermo-Optic On-Chip Mach-Zender Interferometer at Visible Wavelengths Open
View article: The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix Open
In this work, we investigate the epitaxial growth of InAs quantum dots (QDs) on Ge substrates. By varying the growth parameters of growth temperature, deposition thickness and the growth rate of InAs, high density (1.2 × 10 11 cm −2 ) self…
View article: Theoretical analysis and modelling of degradation for III–V lasers on Si
Theoretical analysis and modelling of degradation for III–V lasers on Si Open
InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the …